2020 4th IEEE Electron Devices Technology &Amp; Manufacturing Conference (EDTM) 2020
DOI: 10.1109/edtm47692.2020.9117872
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(Invited) 3D-NAND Reliability: Review of key mechanisms and mitigations

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Cited by 10 publications
(2 citation statements)
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“…Fourth, when large channel potential difference between adjacent WLs is applied in the end of programming loop [16], the electron/hole pair generated via the trap-assisted band-to-band tunneling (BTBT) mechanism reduces the channel boosting potential [17,18]. Fifth, due to the floating body characteristics of 3D NAND, a negative down-coupling phenomenon occurs during the falling of the verify pulse of the selected and the unselected WLs [19], aggravating the deterioration of the hot carrier injection (HCI) program disturb [20]. In this respect, various enhancement algorithms to improve the obstacles of the above program disturb will be described.…”
Section: Improvement Of the Program Disturbmentioning
confidence: 99%
“…Fourth, when large channel potential difference between adjacent WLs is applied in the end of programming loop [16], the electron/hole pair generated via the trap-assisted band-to-band tunneling (BTBT) mechanism reduces the channel boosting potential [17,18]. Fifth, due to the floating body characteristics of 3D NAND, a negative down-coupling phenomenon occurs during the falling of the verify pulse of the selected and the unselected WLs [19], aggravating the deterioration of the hot carrier injection (HCI) program disturb [20]. In this respect, various enhancement algorithms to improve the obstacles of the above program disturb will be described.…”
Section: Improvement Of the Program Disturbmentioning
confidence: 99%
“…This, in turn, can lead to erroneous operations. In 3D NAND, the issue arises in selected word lines (WLs) due to the unique boosting channel potential characteristic known as natural local self-boosting, distinct from the 2D NAND scenario. During repeated read operations, a read reference voltage is applied to the selected transistor, and a pass voltage is applied to unselected cells to facilitate the current flow from the selected cell to the output, ensuring accurate reading of the memory cell. During this process, the state of the unselected transistor must be unchanged to ensure its reliability after repeated read operations. However, the high pass voltage induces electron tunneling, shifting the threshold voltages of the unselected cells to higher values and disturbing their states during read operations.…”
Section: Introductionmentioning
confidence: 99%