(Invited) A Bottom-up SiNW AMOSFET Fabrication Approach Giving SOI Level Performance

Abstract

A new fabrication approach for AMOSFETs (junctionless transistors) is demonstrated using a-Si:H and XeF2 as a sacrificial material and an etchant, respectively. The new approach, which provides advantages of our previous encapsulated and extruded Grow-in-Place approaches, can offer; (1) precise control of position and dimension of grown silicon nanowires (SiNWs) and (2) excellent material properties of grown SiNWs. The resulting AMOSFETs provide on/off current ratios of 106 and a subthreshold slope of ~ 90 mV/dec.