A new compact infrared spectrometer without any mechanical moving elements has been designed and constructed using a two-dimensional InGaAs array detector and 10 sub-gratings. The instrument is compact, with a double-folded optical path configuration. The spectra are densely 10-folded to achieve 0.07-nm spectral resolution and a 2-ms data acquisition time in the 1450- to 1650-nm wavelength region, making the instrument useful for real-time spectroscopic data analyses in optical communication and many other fields.

Grow-in-place VLS Silicon nanowires have been used since 2007 to produce accumulation metal oxide semiconductor accumulation field effect transistors. Since their inception, the in-template version of these devices has suffered from surface quality control whereas the extruded version suffered from control of growth direction. Both of these issues now appear to be solvable. However, doping control remains a problem due to the inadvertent doping of the VLS catalyst. Purposeful doping to overcome this inadvertent doping may be the practical solution to this problem. These devices may have display applications and their simplicity and small size makes them very attractive for sensor applications.

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A new fabrication approach for AMOSFETs (junctionless transistors) is demonstrated using a-Si:H and XeF2 as a sacrificial material and an etchant, respectively. The new approach, which provides advantages of our previous encapsulated and extruded Grow-in-Place approaches, can offer; (1) precise control of position and dimension of grown silicon nanowires (SiNWs) and (2) excellent material properties of grown SiNWs. The resulting AMOSFETs provide on/off current ratios of 106 and a subthreshold slope of ~ 90 mV/dec.