(Invited) Advanced Germanium Epitaxy for Photonics Application

Abstract

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Carbon-Modified-Germanium-Epitaxy: Filtering Threading Dislocations with Carbon Delta Layers

“…This indicates that a minimum amount of Ge on top of the C layers may be needed, and that an annealing step prior to further Ge growth yields a change in surface formation. The sample from Figures 1 and 2 was analysed using defect etching and yielded a defect density of 1×10 8 cm -2 which is a low value for a 228 nm layer [9].…”