Silicon-Germanium: Properties, Growth and Applications

Haddara, Yaser M.; Ashburn, P.; Bagnall, Darren M.

doi:10.1007/978-3-319-48933-9_22

Cited by 33 publications

(23 citation statements)

References 75 publications

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“…However, the major portion of the responsivity for both form of GST is higher than 0.1 A/W, hence can be used in entire NIR range. The detectivity obtained is still comparable to many planar Si/Ge or transition-metal based MSM/junction photodetectors 15 . However, this lowering in detectivity might be assumed due to a comparatively larger dark current especially in CGST.…”

Section: Resultssupporting

confidence: 56%

“…This might get worsen if a compound SC technology is involved in the processing 14 . Si/Ge/SiGe based HSs gained popularity due to their higher compatibility with Si-based technology 15 . However, they are limited to fulfil the wide range of applications, even have the bottleneck in performance in a particular application specially limiting the operating bandwidth in optoelectronic devices.…”

mentioning

confidence: 99%

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CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Srivastava

Mishra

Kumar

2020

Sci Rep

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Heterostructures (HS) have always been in attraction due to their inherited properties and different important applications. integration of a phase-change material (pcM) with HS can tremendously extend the operating and application range using the "phase-tuning" of pcM for any optoelectronic devices. in the present study, we report a detailed study of electrical and optoelectronic characteristics of a p-p and p-n HS combining Ge 2 Sb 2 te 5 (GST) and Si. Reasonable 2 order of resistance switching is achieved by thermal annealing. the changes in optical properties are analysed using ellipsometry, UV-Vis-niR and Raman spectroscopy to speculate the optoelectronic behaviour of GSt/Si samples. the optical and electrical characterization were analysed with aluminium (Al), platinum (pt) and ti/ Au contacts. Appreciable rectifications varying from 500 to 1,000 at lower voltages are achieved with different contacts for both phases of GST. The change in rectification amount and current polarity are obtained with different kinds of contacts and at different incident wavelengths indicating different mechanisms of charge separation and collection. Responsivity of more than 9 A/W with < 1,000 photocurrent to dark-current ratio is demonstrated in wavelength range of 0.8-2 μm under moderate range of biasing under ~ μW source power illumination. The characteristics obtained were justified with the prediction of band alignment with the help of work-function difference measurement by Kelvinprobe force microscopy and carrier density measurement by Hall experiment. our results provide understanding to the opto-electrical behaviour of a heterojunction made of stacking PCM (GST) on Si highlighting their future use in photonic/optoelectronic-integrated circuits. Heterostructures have received intensive attentions due to their excellent intrinsic properties and wide applications ever since their emergence at very dawn of semiconductor (SC) technology in 1932 1. Heterostructures (HS), especially heterojunctions, juxtapose two different layers of materials which usually are of different materials having different properties. If the two materials are of same type (n-n or p-p) then it is called as "isotype" otherwise known as "anisotype" (e.g. n-p type) 2. Both types of the HS have their different potential applications 3. Fundamentally, instead of controlling the electrical parameters of a semiconductor by external doping and carrier injection, heterostructures can inherit different material properties of two layers e.g. controlling the charge transfer at the interface and controlling the fundamental parameters such as bandgap, effective masses, mobilities, refractive indices, etc., in the semiconductor based devices 4. Nowadays, scientists/researchers are more interested in the interactions at the junction interface to improve the performance and sometimes synergistic properties as well 5. HS are widely used as the basic building blocks in conventional devices such as photodiodes 6 , solar cells 7 , LEDs 8 , as well as in complicated struc...

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Section: Resultssupporting

confidence: 56%

mentioning

confidence: 99%

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Srivastava

Mishra

Kumar

2020

Sci Rep

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“…Hence, we restrict our further remarks to an evaluation of the band line ups for the n-Si/MAPI heterojunction for the cases of the junction being one sided in either the n-Si or the MAPI-and some corroborative data from Kelvin-probe measurements. [19], [20] for one-sided junctions. In (a), the field is presumed to be in the MAPI, whereas in (b), it is in the n-Si.…”

Section: Devices With Silicon Having Different Resistivitiesmentioning

confidence: 99%

“…6. The band data were obtained from the literature [19], [20] and the fermi levels were positioned appropriately for the doping with the MAPI being intrinsic and the spiro-OMeTAD being p-type [21]. Here, we considered the two cases of one-sided junctions with the field being either in the MAPI [see Fig.…”

Section: E Band Diagrams and Evidence For A Valence Band Discontinuimentioning

confidence: 99%

Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications

Mariotti

Turkestani

Hutter

et al. 2020

IEEE J. Photovoltaics

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We investigated the formation of photovoltaic (PV) devices using direct n-Si/MAPI (methylammonium lead tri-iodide) two-sided heterojunctions for the first time (as a possible alternative to two-terminal tandem devices) in which charge might be generated and collected from both the Si and MAPI. Test structures were used to establish that the n-Si/MAPI junction was photoactive and that spiro-OMeTAD acted as a "pinhole blocking" layer in n-Si/MAPI devices. Two-terminal "substrate" geometry devices comprising Al/n-Si/MAPI/spiro-OMeTAD/Au were fabricated and the effects of changing the thickness of the semitransparent gold electrode and the silicon resistivity were investigated. External quantum efficiency and capacitance-voltage measurements determined that the junction was one-sided in the silicon-and that the majority of the photocurrent was generated in the silicon, with there being a sharp cutoff in photoresponse above the MAPI bandgap. Construction of band diagrams indicated the presence of an upward valence band spike of up to 0.5 eV at the n-Si/MAPI interface that could impede carrier flow. Evidence for hole accumulation at this feature was seen in both Kelvin-probe transients and from unusual features in both current-voltage and capacitance-voltage measurements. The devices achieved a hysteresis-free best power conversion efficiency of 2.08%, V OC 0.46 V, J SC 11.77 mA/cm 2 , and FF 38.4%, demonstrating for the first time that it is possible to create a heterojunction PV device directly between the MAPI and

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“…Согласно имеющимся данным [8,9], наиболее низкие величины фононного вклада и полного коэффициента теплопроводности достигаются в структурах, содержащих от 20 at.% Ge, которые (в отличие от ряда других термоэлектрических систем [6]) термодинамически устойчивы при комнатной и больших температурах [10,11]. Также сплавы системы Si−Ge обладают широкой запрещенной зоной с возможностью плавного ее изменения, устойчивостью к высоким температурам и рядом других свойств [12], что обеспечивает данным материалам крайне широкую область применения (например, радиоизотопные термоэлектрические генераторы космических модулей ( " Вояджер 2" и др.) [1]).…”

Section: Introductionunclassified

К вопросу о плавлении наночастиц фрактальной формы (на примере системы Si-Ge)

Шишулин¹,

Федосеев²,

Шишулина³

2019

Журнал Технической Физики

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In this paper, thermodynamical approach has been used to simulate the influence of shape on phase equilibria in the two-phase-region between liquidus and solidus temperatures in case of Si-Ge alloy nanoparticles. Volumes and shapes of considered nanoparticles have been described by their effective radii and fractal dimensions, the dependence of fractal dimensions on temperature has been obtained using a simple geometrical model. It has been shown that decreasing the volume of a nanoparticle and its fractal dimension (which corresponds to nanoparticles of a more complicated shape) leads to narrowing down the temperature range of the heterogeneous region and changes the phase transition temperatures and equilibrium compositions of co-existing phases. At different temperatures, the dependences of the composition of the liquid phase differ which is explained by implementing different mechanisms of reducing the surface energy.

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Silicon-Germanium: Properties, Growth and Applications

Cited by 33 publications

References 75 publications

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

CMOS compatible novel integration solution for broad range tunable photodetection using phase-change material based heterostructures

Direct Silicon Heterostructures With Methylammonium Lead Iodide Perovskite for Photovoltaic Applications

К вопросу о плавлении наночастиц фрактальной формы (на примере системы Si-Ge)

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