(Invited) Characteristics of a Wire-Bonding-Less SiC Power Module Operating in a Wide Temperature Range

Abstract

Using high-speed switching, SiC power devices can reduce on-resistance in the on-state to realize low power converter losses. In addition, SiC power devices can be operated in high temperatures; thus, their cooling systems can be reduced in size or removed altogether, thereby increasing the power density of the power converter. The authors have studied a power module and power converter using properties of SiC power devices, and have previously proposed a power converter having high power density with a power module that is capable of high temperature operation , a gate driving technique for SiC power devices to prevent false turn-on with high-speed switching, and development of a noise filter for high-speed switching or high-frequency switching. In this study, we designed and fabricated a SiC power module with a built-in snubber circuit. This power module is operable in high temperatures over 200 °C.

Transient thermal characteristics of high-temperature SiC power module enhanced with Al-bump technology

“…We have developed an Al-bump flip-chip mounting that can be used up to 250 °C. [22][23][24][25] This technology is needed to mount components on interconnection boards connected through Al bumps, providing high-density three-dimensional (3D) mounting. As the heat capacity of the interconnection board is mounted on the devices using Al bumps of high thermal conductivity, transient thermal impedance is reduced.…”

Switching Analysis for All-SiC Module

“…We had previously developed a mounting technology for low inductance power modules [1], reliability for high temperature operations [2], and a mounting technology that enables the mounting of snubber circuits in the power module [3]. Moreover, we have demonstrated a three-phase inverter and a resonant DC-DC converter, which can achieve a high power density and a high efficiency [4]. SiC power devices can realize switching at higher speeds compared to conventional Si-IGBTs; i.e., they produce a high dv/dt and di/dt during switching operations.…”

Development of a Wire-Bonding-Less SiC Power Module Operating over a Wide Temperature Range

“…The authors have previously studied a power module and a power converter using the properties of SiC power devices, and have proposed a power converter having high power density with a power module that is capable of high-temperature operation [1][2][3]. They also developed a gate driving technique for SiC power devices to prevent false turn-on with high-speed switching [4,5], and a noise filter for high-speed switching or high-frequency switching [6,7].…”