(Invited) Comparison of Slurry Film Distribution between a Novel Slurry Injection System and Conventional Slurry Application Method

Zhuang, Yun; Sampurno, Yasa; Wu, Changhong; Wu, B.; Mu, Yannan; Borucki, L.; Philipossian, Ara; Yang, Ray Yeng

doi:10.1149/06001.0625ecst

Cited by 7 publications

(11 citation statements)

References 3 publications

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“…This has been confirmed by the thick An example slurry distribution image with SIS collected via UVIZ-100 system. 15 bow wave formed at the injector leading edge during the pad rinse step and wafer polishing. 5,15 As an example, Fig.…”

Section: Resultsmentioning

confidence: 99%

“…15 bow wave formed at the injector leading edge during the pad rinse step and wafer polishing. 5,15 As an example, Fig. 4 shows a slurry distribution image collected using the SIS via a UVIZ-100 system.…”

Section: Resultsmentioning

confidence: 99%

“…4 shows a slurry distribution image collected using the SIS via a UVIZ-100 system. 15 A brief description of the image capturing method is summarized below while a more detailed description can be found elsewhere. 13 UV light is projected onto the area of interest on the pad.…”

Section: Resultsmentioning

confidence: 99%

“…5,[11][12][13][14][15] Using the SIS, fresh slurry is introduced through an injector which is placed on the pad surface, as shown in Fig. 1b.…”

mentioning

confidence: 99%

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Effect of Pad Groove Design on Slurry Injection Scheme during Interlayer Dielectric Chemical Mechanical Planarization

Sampurno

Liao

et al. 2015

ECS J. Solid State Sci. Technol.

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In this study, the effect of pad groove design on slurry injection scheme during interlayer dielectric chemical mechanical planarization was investigated. A novel slurry injection system (SIS) with multiple slurry outlets was designed to allow fresh slurry to be injected through one or multiple points. At first, the SIS with one injection point scheme was compared with the standard slurry application method on a concentrically grooved pad and an xy-groove pad. On the concentrically grooved pad, the SIS with one injection point scheme generated significantly higher oxide removal rates (ranging from 22 to 35 percent) compared to the standard slurry application method at different slurry flow rates. On the xy-groove pad, the SIS with one injection point scheme still resulted in higher removal rates (ranging from 3 to 9 percent), however, its removal rate enhancement was not as high as that of the concentrically grooved pad. In order to further improve slurry availability on the xy-groove pad, SIS with multi-injection point scheme was tested. Results showed that the SIS with multi-injection point scheme resulted in significantly higher removal rates (ranging from 17 to 20 percent) compared to the standard slurry application method. This work underscored the importance of optimum slurry injection scheme for accommodating particular pad groove designs. Chemical mechanical planarization (CMP) has been widely used in the integrated circuit (IC) processing industry to achieve both local and global surface planarity through combined chemical and mechanical actions.1,2 Slurry, one of the consumables, represents almost half of the total cost of ownership (COO) of the CMP module.3 It also contains environmentally harmful chemicals. In the current state-ofthe-art CMP processes, fresh slurry is applied on the pad center area through a single tube (called standard slurry application method), as shown in Fig. 1a. Platen-wafer rotation, pad grooves and the retaining ring help transport the fresh slurry to the pad-wafer interface. In some processes, a significant portion of the fresh slurry flows directly off the pad surface without ever entering the pad-wafer interface due to the retaining ring and inertial forces. On the other hand, some slurry that has passed under the wafer stays on the pad (referred as used slurry), mixes with the fresh slurry and re-enters the pad-wafer interface. The chemicals in the used slurry may become less reactive and hence may decrease material removal rate as they continue to reside on the pad surface. 4 Furthermore, large amounts of deionized (DI) water is typically used to rinse the pad between wafer polishes. At the end of the pad rinse step, appreciable DI water stays on the pad surface. When the fresh slurry is introduced to polish the next wafer, it mixes with the residual rinse water and gets diluted (referred as dilution effect), resulting in a lower material removal rate.5 As such, the standard slurry application method does not provide efficient slurry utilization. A previous study has sho...

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…5,[11][12][13][14][15] Using the SIS, fresh slurry is introduced through an injector which is placed on the pad surface, as shown in Fig. 1b.…”

mentioning

confidence: 99%

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Effect of Pad Groove Design on Slurry Injection Scheme during Interlayer Dielectric Chemical Mechanical Planarization

Sampurno

Liao

et al. 2015

ECS J. Solid State Sci. Technol.

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“…[10][11][12][13][14] The particular model of the SIS employed here was developed for the AMAT Mirra polisher (Fig. 1).…”

Section: The Slurry Injection System (Sis)mentioning

confidence: 99%

Laser Tilt Measurements of a Slurry Injection System

Borucki¹,

Sampurno

Zhuang

et al. 2015

ECS J. Solid State Sci. Technol.

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In this paper, we describe a method that we have developed for studying the behavior of a novel slurry injection system (SIS) during polishing. The method uses sensitive laser measurements and automated image analysis to infer the pitch of the injector body as a function of time under various conditions on a research polisher. The measurements clearly show the pitch response of the injector during typical CMP processing steps, such as pad rinsing and wafer polishing. Changes in pitch behavior as a function of injector design and operation, in combination with removal rate measurements, suggest explanations for the removal rate behavior of the device. One of the issues in chemical mechanical planarization (CMP) is that it can be difficult to gather fundamental data that can be used to understand what is happening during the process. Many of the advances in understanding and subsequent improvements in CMP have come about through innovative metrology. For example, measurements of the friction force between the pad and wafer have provided fundamental information about the lubrication regime of the process.1,2 The same measurements have also been used in end point detection to determine when one layer has been removed and another exposed. Similarly, key advances in our understanding of CMP have come about as a result of the application of pad thermal imaging, 4 measurements of the pressure of the fluid between the wafer and pad, 5,6 capacitance distance measurements of wafer bending and head tilt 7 and confocal microscopy of pad surfaces. 8,9 In this paper, we describe a simple laser tilt measurement system that has been used to monitor the pitch of a novel slurry injection system (SIS). The laser measurements provide some insight into the behavior of the injection system during typical processing procedures, such as pad rinsing and wafer polishing. These insights help explain the important factors underlying the performance of the injector. As a side effect, the measurements also uncover an unsuspected behavior of the polisher. The Slurry Injection System (SIS)The SIS used in this study, and its performance have been described in detail elsewhere. [10][11][12][13][14] The particular model of the SIS employed here was developed for the AMAT Mirra polisher (Fig. 1). The functional part of the system is the injector body, which is rectangular and has a bottom made of PEEK (polyetheretherketone). The bottom is patterned and flexible and is meant to be held in close contact with the pad using a light load. The system is connected to the polisher through gimbal points that sit well in front of the device and close to the pad surface; these points therefore can apply only small pitching torques to the body. Slurry is applied through one or more tubes that protrude through the cover of the device. The slurry feeds into a narrow open channel in the bottom and is distributed in the radial direction of the polishing pad. Slurry is then advected from the channel by the moving pad surface and emerges from the trailing edge of th...

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Micro-galvanic corrosion of Cu/Ru couple in potassium periodate (KIO 4 ) solution

et al. 2018

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(Invited) Comparison of Slurry Film Distribution between a Novel Slurry Injection System and Conventional Slurry Application Method

Cited by 7 publications

References 3 publications

Effect of Pad Groove Design on Slurry Injection Scheme during Interlayer Dielectric Chemical Mechanical Planarization

Effect of Pad Groove Design on Slurry Injection Scheme during Interlayer Dielectric Chemical Mechanical Planarization

Laser Tilt Measurements of a Slurry Injection System

Micro-galvanic corrosion of Cu/Ru couple in potassium periodate (KIO 4 ) solution

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