2021
DOI: 10.1149/10202.0003ecst
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(Invited) Crystalline Oxide Semiconductor Applicable to Low-Power Consumption Edge AI

Abstract: An oxide semiconductor field-effect transistor (OSFET) using c-axis-aligned crystalline indium–gallium–zinc oxide (CAAC-IGZO) exhibits extremely low off-state current (Ioff) and can be fabricated at a low process temperature that is 400°C or lower. The features indicate that the CAAC-IGZO FET is suitable for a monolithic stacking process and application to artificial intelligence (AI). This paper shows electric characteristics of the CAAC-IGZO FET and their factors.

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Cited by 3 publications
(3 citation statements)
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“…In addition to being the mainstream technology for modern displays, TFT process shows the ability to easily integrate various kinds of sensors on the top, including temperature [75], pressure [41,78,79], and optical [80,81]. Also, the CMOS circuits can be integrated by either BEOL-compatible stack [11,66] or assembly technology for discrete CMOS chips [77]. With such advantages, a pure-TFT edge interaction system with processing, controlling, sensing and display seamlessly integrated on a single TFT panel can be accomplished, where an additional CMOS processing integration can further enhance the capability of intelligence processing.…”
Section: Integration With Thin-film Sensors and Cmos Processorsmentioning
confidence: 99%
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“…In addition to being the mainstream technology for modern displays, TFT process shows the ability to easily integrate various kinds of sensors on the top, including temperature [75], pressure [41,78,79], and optical [80,81]. Also, the CMOS circuits can be integrated by either BEOL-compatible stack [11,66] or assembly technology for discrete CMOS chips [77]. With such advantages, a pure-TFT edge interaction system with processing, controlling, sensing and display seamlessly integrated on a single TFT panel can be accomplished, where an additional CMOS processing integration can further enhance the capability of intelligence processing.…”
Section: Integration With Thin-film Sensors and Cmos Processorsmentioning
confidence: 99%
“…Due to the ultra-low leakage current, IGZO TFT has attracted a lot of interest from the display field, which can greatly reduce the refresh frequency at the quiescent mode of the panel [66]. Such a characteristic is also suitable for memory application, where longretention eDRAM cells can be implemented [11,12].…”
Section: Almost-nonvolatile Analog Memorymentioning
confidence: 99%
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