(Invited) Heterogeneous Integration of InP HBTs on CMOS: Leveraging and Providing Value to Conventional Silicon Technologies

Abstract

Historically, compound semiconductors have enjoyed the benefit of material properties that lend themselves to high performance electron devices, but the ability to fabricate complex, high transistor count ICs is limited by the relative immaturity of the material system and small commercial market. Silicon based devices have made significant advances in device performance, but have not yet matched compound semiconductor device performance. However, a large commercial market has allowed the silicon system to mature and produce billion transistor count ICs in high volume. It would be advantageous to combine the merits of both compound semiconductors and silicon based CMOS/BiCMOS to enable a new class of high performance ICs. This work will review HRL's efforts in wafer scale integration of an advanced 250nm, 350GHz fT/fMAX InP DHBT technology with RF-CMOS technologies whose device proximity; heterogeneous interconnect density; and additional technology features both leverage and provide additional value to conventional silicon technologies.

Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings

“…Measuring the donors if they are in the same layer as the dots could also lead to a complex routing arrangement for moving electrons to the neighboring donors. It should be noted that multi-layer heterogeneous integration with micron-scale device registration, as would be necessary for the backgate approach, has been demonstrated 45 . Details of layout and fabrication complexity will determine this choice, and are beyond the scope of the present discussion.…”