(Invited) Integration of an Epitaxial-Base-Link HBT Device with f_T = 300GHz, f_max 480GHz in 90nm CMOS

Abstract

In this contribution we report the successful integration of a SiGe HBT module with fT = 300GHz, fmax = 480GHz in a 90nm BiCMOS technology platform. Building on previous studies by IHP and Infineon the Epitaxial-Base-Link process flow was further adapted for compatibility to the 90nm CMOS base technology.