SiGe HBTs with ${f_{T}/f_{\max}\,\sim\,375/510GHz}$ Integrated in 45nm PDSOI CMOS

Pekarik, John J.; Jain, Vibhor; Kenney, Crystal; Holt, J.; Khokale, Shweta; Saroop, Sudesh; Johnson, J. B.; Stein, K.; Ontalus, V.; Durcan, Chris; Nafari, Mona; Nesheiwat, Tayel; Saudari, Sangameshwar Rao; Yarmoghaddam, Elahe; Chaurasia, Saloni; Joseph, A.J.

doi:10.1109/bcicts50416.2021.9682454

Cited by 11 publications

(3 citation statements)

References 17 publications

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“…A 45nm PDSOI BiCMOS process has been presented with SiGe NPN HBTs having fT of 380GHz and fMAX of 550GHz, improving upon previously reported results (7). The benefits of the advanced processing capabilities outweigh the challenges of integrating BiCMOS in advanced-node CMOS.…”

Section: Discussionmentioning

confidence: 51%

“…500GHz fMAX and beyond regime is currently demonstrated by the SiGe HBT and compound semiconductor transistors (10)(11)(12). HBTs with fT/fMAX of 380/550GHz GHz have been demonstrated building upon previously published results (7). This paper will touch on some of the challenges that were encountered in achieving that result and discuss those anticipated in future work.…”

Section: Introductionmentioning

confidence: 90%

“…Vertical scaling for improved fT increases CCB per unit emitter area (AE) and lateral scaling helps reduce the overall CCB for a given AE. In this process, HBT area for an active AE of 0.4m 2 (0.1x4), is ~60% smaller than the device designed in SiGe9HP (7). In addition to single devices, the test chip also contains large arrays of devices to evaluate NPN yield.…”

Section: Ecs Transactions 109 (4) 141-149 (2022)mentioning

confidence: 99%

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