2013
DOI: 10.1149/05201.0137ecst
|View full text |Cite
|
Sign up to set email alerts
|

(Invited) Patterning Process Model Challenges for 14 Nm

Abstract: The taxonomy of semiconductor technology nodes has long since decoupled from the minimum critical dimension (CD) associated with the designs, but each new node nonetheless features a variety of difficult challenges. CD control and placement budgets continue to tighten with each node as new and more complex RET strategies such as multi-layer patterning, model-based assist feature, pixelated illumination sources, and negative tone develop processes are deployed. Optical Proximity Correction (OPC) is of course a… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

2017
2017
2018
2018

Publication Types

Select...
1
1

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
references
References 9 publications
0
0
0
Order By: Relevance