(Invited) SiGe BiCMOS for Optoelectronics

Abstract

Silicon-based electronic-photonic integrated circuit (ePIC) technology enables a high degree of integration of optoelectronic subsystems for optical communications. In this paper we give an overview about IHP’s work in ePIC technology development under use of different SiGe BiCMOS baseline processes. Focus is on "Photonic BiCMOS", a new monolithic ePIC technology which combines high-performance BiCMOS technology with high-speed photonic devices for electronic-photonic submodules for next generation communication networks. Main features of this technology are described, including an overview of offered photonic and electronic devices. Examples of demonstrator circuits fabricated in the new technology are also presented. Another approach of merging photonics with electronics is hybrid assembly. In a second part of the paper we will demonstrate the potential of SiGe BiCMOS as the ‘electronics supplier’ for this approach.

Parametric optimization of depletion-type Si micro-ring modulator performances

“…The device fabricated by Innovations for high-performance microelectronics is used for experimental verification. 32) Figures 6(a) and 6(b) show the optical microscopy images of the fabricated Si MRM. In order to verify our optimization process, we designed a Si MRM for 25 Gbps operation which requires τ l = 26.40 and τ e = 25.36 ps rad −1 roughly corresponding to point B in Fig.…”

(Invited) Directly Silicon Nitride Waveguide Coupled Ge Photodiode for Non-SOI PIC and Epic Platforms

“…2) The demonstrated devices are in principle compatible for co-integration with IHP's photonic BiCMOS process (6), which opens various opportunities for novel sensing or spectroscopic applications as well. 3) This work could pave the way towards a non-SOI based technology as an alternative to established SOI based PIC or electronic-photonic integrated circuit (ePIC) platforms, e.g.…”