Parametric optimization of depletion-type Si micro-ring modulator performances

Kim, Younghyun; Jo, Youngkwan; Kim, Minkyu; Yu, Byung Min; Mai, Christian; Lischke, Stefan; Zimmermann, Lars; Choi, Woo Young

doi:10.7567/1347-4065/ab22ce

Cited by 8 publications

(3 citation statements)

References 29 publications

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“…When d is 150 nm, the f cutoff is larger than 35 GHz, which enables the 50 Gbps NRZ data rate. 24,25) Since the main drawback of LSPN is the smaller f cutoff due to the larger C j compared to that of LPN, one could compensate by using a single-drive configuration, reported in, 26) shown in Fig. 5(a).…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

A comparative simulation study on lateral and L-shaped PN junction phase shifters for single-drive 50 Gbps lumped Mach–Zehnder modulators

Kim¹,

Jin²,

Bae³

2021

Jpn. J. Appl. Phys.

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We present a comparative study of lateral and L-shaped PN junction Si optical phase shifters for Mach–Zehnder modulators in Si photonics based on TCAD simulation. First, we introduce an easy fabrication method for L-shaped PN junctions by inverting dominant dopant type in Si. Then, we present the quantitative comparison of Si optical phase shifters. The L-shaped PN junction device shows the larger modulation efficiency of VpiL and the lower optical phase shifter loss compared to the lateral one. The VpiL for the vertical one is 0.89 Vcm, nearly half that of the lateral one, 1.76 Vcm at the same optical phase shifter loss, 10.5 dB cm−1. Finally, taking advantage of single-drive configuration and optimizing input characteristic impedance, the large-signal simulation with 1 mW input power and a 500 μm phase shifter shows the dynamic optical modulation amplitude of 0.22 mW for the vertical one, which could be a promising solution for a compact device footprint without a traveling wave electrode.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

A comparative simulation study on lateral and L-shaped PN junction phase shifters for single-drive 50 Gbps lumped Mach–Zehnder modulators

Kim¹,

Jin²,

Bae³

2021

Jpn. J. Appl. Phys.

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“…Here we assume the effectiveindex variation of the Si waveguide is a linear function of a small signal applied on the p-n junction. According to the coupledmode theory [13] of a microcavity, the transfer function of EO conversion for the Si MRM in the s-domain can be expressed by [20], [21], [22].…”

Section: Electrical-to-optical Conversion Of a Silicon Microring Modu...mentioning

confidence: 99%

Study of Electrical and Optical Peaking of Si Ring Modulators for Tailoring Modulation Band

2023

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An operation scheme using electrical peaking and optical peaking to engineer the modulation band of a Si microring modulator is presented. By incorporating an inductor design at the metal traces of a Si microring modulator, the driving signal can be magnified near the peaking frequency. Although adjusting the wavelength detuning of a ring modulator also introduces optical peaking to extend the 3-dB roll-off frequency, using inductive peaking has no detrimental effect on the low-frequency response. By exploiting both effects, the modulation band can be tailored with more degrees of freedom. We accomplish a Si microring modulator design with a wide and flat transmission band over 95 GHz, which is potentially applied for a non-return-to-zero (NRZ) data transmission over 120 Gbit/s without extra signal post-compensation.

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“…On top of that, there have been many efforts to improve modulation efficiency. Compared to conventional Si MZ modulators, Si micro-ring modulators using a high-cavity resonator have been proposed which greatly reduce the footprint to <10 µm diameter [35][36][37][38]. Slow light-assisted Si modulators using a photonic crystal with more than 10 times smaller size have been demonstrated [39,40].…”

Section: Introductionmentioning

confidence: 99%

Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

et al. 2021

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The realization of a silicon optical phase shifter marked a cornerstone for the development of silicon photonics, and it is expected that optical interconnects based on the technology relax the explosive datacom growth in data centers. High-performance silicon optical modulators and switches, integrated into a chip, play a very important role in optical transceivers, encoding electrical signals onto the light at high speed and routing the optical signals, respectively. The development of the devices is continuously required to meet the ever-increasing data traffic at higher performance and lower cost. Therefore, heterogeneous integration is one of the highly promising approaches, expected to enable high modulation efficiency, low loss, low power consumption, small device footprint, etc. Therefore, we review heterogeneously integrated optical modulators and switches for the next-generation silicon photonic platform.

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Parametric optimization of depletion-type Si micro-ring modulator performances

Cited by 8 publications

References 29 publications

A comparative simulation study on lateral and L-shaped PN junction phase shifters for single-drive 50 Gbps lumped Mach–Zehnder modulators

A comparative simulation study on lateral and L-shaped PN junction phase shifters for single-drive 50 Gbps lumped Mach–Zehnder modulators

Study of Electrical and Optical Peaking of Si Ring Modulators for Tailoring Modulation Band

Heterogeneously-Integrated Optical Phase Shifters for Next-Generation Modulators and Switches on a Silicon Photonics Platform: A Review

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