Abstract:This paper demonstrates the methodology to understand the random dopant fluctuation (RDF) from the electrical measurements. The theoretical basis from an experimental discrete dopant profiling technique has first been introduced to analyze the RDF effect. It was further demonstrated on the advanced strain-silicon devices and advanced trigate devices. The discrete dopant distributions along the channel direction can be achieved, followed by the demonstration of the dopant fluctuation in SiC S/D strained and SiG… Show more
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