(Invited) Towards EPC Compatible Plastic RFID Tags

Myny, Kris; Vicca, Peter; Beenhakkers, Monique J.; Aerle, N. A. J. M. van; Furthner, François; Putten, Bas van der; Tripathi, Ashutosh; Genoe, Jan; Dehaene, Wim; Heremans, Paul

doi:10.1149/1.3481261

Cited by 3 publications

(2 citation statements)

References 7 publications

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“…The carrier mobility of OFETs has been greatly improved over the past few decades, thanks to significant progresses in the development of organic semiconductor (OSC) compounds and their fabrication techniques. In recent years, high mobilities exceeding 10 cm 2 V −1 s −1 have been frequently reported in solution‐processed OSCs, which opens up possibilities for high‐speed device applications such as radio‐frequency identification (RFID) tags . Although a high carrier mobility is a prerequisite for high‐speed switching of a transistor, improving mobility alone is not sufficient to reduce the entire device resistance and does not result in faster operation.…”

Section: Introductionmentioning

confidence: 99%

High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band

Yamamura

Sakon

Takahira

et al. 2020

Adv Funct Materials

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Although high carrier mobility organic field‐effect transistors (OFETs) are required for high‐speed device applications, improving the carrier mobility alone does not lead to high‐speed operation. Because the cut‐off frequency is determined predominantly by the total resistance and parasitic capacitance of a transistor, it is necessary to miniaturize OFETs while reducing these factors. Depositing a dopant layer only at the metal/semiconductor interface is an effective technique to reduce the contact resistance. However, fine‐patterning techniques for a dopant layer are still challenging especially for a top‐contact solution‐processed OFET geometry because organic semiconductors are vulnerable to chemical damage by solvents. In this work, high‐resolution, damage‐free patterning of a dopant layer is developed to fabricate short‐channel OFETs with a dopant interlayer inserted at the contacts. The fabricated OFETs exhibit high mobility exceeding 10 cm2 V−1 s−1 together with a reasonably low contact resistance, allowing for high frequency operation at 38 MHz. In addition, a diode‐connected OFET shows a rectifying capability of up to 78 MHz at an applied voltage of 5 V. This shows that an OFET can respond to the very high frequency band, which is beneficial for long‐distance wireless communication.

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Section: Introductionmentioning

confidence: 99%

High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band

Yamamura

Sakon

Takahira

et al. 2020

Adv Funct Materials

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“…They can be cheap and flexible, and there is no technological hurdle in fabricating large area devices. Among them, organic field effect transistors (OFETs) have been attracting extensive research attention as the main backbone of electronic circuits [2][3][4][5]. Impressive achievements have been realized over the last few years thanks to advancements in both chemical and device engineering [6,7].…”

Section: Introductionmentioning

confidence: 99%

Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate

Houin

Duez

Garcia

et al. 2017

Flex. Print. Electron.

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Solution‐processed and low‐temperature metal oxide n‐channel thin‐film transistors and low‐voltage complementary circuitry on large‐area flexible polyimide foil

et al. 2012

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High‐performance solution‐based n‐type metal oxide thin‐film transistors (TFTs), fabricated directly on polyimide foil at a post‐annealing temperature of only 250 °C, are realized and reported. Saturation mobilities exceeding 2 cm²/(Vs) and on‐to‐off current ratios up to 108 are achieved. The usage of these oxide n‐type TFTs as the pixel drive and select transistors in future flexible active‐matrix organic light‐emitting diode (AMOLED) displays is proposed. With these oxide n‐type TFTs, fast and low‐voltage n‐type only flexible circuitry is demonstrated. Furthermore, a complete 8‐bit radio‐frequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n‐type TFTs have reached already a high level of yield and reliability. The integration of the same solution‐based oxide n‐type TFTs with organic p‐type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n‐type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line‐drive circuitry embedded at the borders of flexible AMOLED displays.

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(Invited) Towards EPC Compatible Plastic RFID Tags

Cited by 3 publications

References 7 publications

High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band

High‐Speed Organic Single‐Crystal Transistor Responding to Very High Frequency Band

Device engineering for high-performance, low-voltage operating organic field effect transistor on plastic substrate

Solution‐processed and low‐temperature metal oxide n‐channel thin‐film transistors and low‐voltage complementary circuitry on large‐area flexible polyimide foil

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