(Invited) Tunneling FET Technologies Using III-V and Ge Materials

Abstract

We have demonstrated high performance operation of planar-type tunnel field-effect transistors (TFETs) using Ge/III-V materials. It is found that solid-phase Zn diffusion can realize steep-profile and defect-less p+/n source junctions. We have demonstrated the operation of high Ion/Ioff and low SS planar-type InGaAs tunnel FETs with Zn-diffused source junctions. The small S.S. of 64 mV/dec and large Ion/Ioff ratio over106 has been realized in the planar-type III-V TFETs. It is also shown that tensile strain in Si channels (sSi) combined with the Ge source can enhance the tunneling current because of the reduced effective energy bandgap. The fabricated Ge/sSOI (1.1 %) TFETs show high Ion/Ioff ratio over 107 and steep minimum subthreshold slope (SS) of 28 mV/dec.