InxGa1−xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics

Akabori, Masashi; Guzenko, Vitaliy A.; Schäpers, Thomas; Hardtdegen, H.

doi:10.1016/j.jcrysgro.2008.07.020

Cited by 3 publications

(2 citation statements)

References 14 publications

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“…These layers are also commonly used in semiconductor industry. Moreover, these layers can be used in photonics [2], optoelectronics [3] and spintronics [4]. Nanoparticles can be used for modification of the mechanical properties of materials [5] and nanocomposites, like ultra-thin layers, can be used to enhance the electrical properties of materials [6].…”

Section: Introductionmentioning

confidence: 99%

Characterization of Epitaxial Layers Using Scanning Microwave Microscopy

Martinek¹,

Kudelka²,

Navrátil³

et al. 2016

DAAAM Proceedings

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Section: Introductionmentioning

confidence: 99%

Characterization of Epitaxial Layers Using Scanning Microwave Microscopy

Martinek¹,

Kudelka²,

Navrátil³

et al. 2016

DAAAM Proceedings

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“…Selective area growth techniques, which have recently been revived by the interest for quantum information and spintronics applications [11], enable a precise position control of nanostructures defined by the pattern design, e.g. quantum dots or nanowires, making this technology suitable for achieving scalable circuits.…”

Section: Introductionmentioning

confidence: 99%

Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures

Granger

Kam

Studenikin

et al. 2010

Physica E: Low-dimensional Systems and Nanostructures

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Electron transport in gated InGaAs Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10.1016/j.physe. 2009.11.062 Physica E, 42, 10, pp. 2622-2627, 2010-09-01 Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam epitaxy (CBE) on pre-patterned InP substrates. To optimize the growth and micro-fabrication processes for electronic transport, we explore the Ohmic contact resistance, the electron density, and the mobility as a function of the wire width using standard transport and Shubnikov-de Haas measurements. At low temperatures the ridge structures reveal reproducible mesoscopic conductance fluctuations. We also fabricate ridge structures with submicron gate electrodes that exhibit non-leaky gating and good pinch-off characteristics acceptable for device operation. Using such wrap gate electrodes, we demonstrate that the wires can be split to form quantum dots evidenced by Coulomb blockade oscillations in transport measurements.Crown

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Optical Properties of Thin Tungsten Films

Martinek

2022

2022 26th International Conference on Circuits, Systems, Communications and Computers (CSCC)

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InxGa1−xAs/InP selective area metal-organic vapor phase epitaxy for non-magnetic semiconductor spintronics

Cited by 3 publications

References 14 publications

Characterization of Epitaxial Layers Using Scanning Microwave Microscopy

Characterization of Epitaxial Layers Using Scanning Microwave Microscopy

Electron transport in gated InGaAs and InAsP quantum well wires in selectively grown InP ridge structures

Optical Properties of Thin Tungsten Films

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