Ion-based growth of special films: Techniques and mechanisms

Weißmantel, Christian

doi:10.1016/0040-6090(82)90187-0

Cited by 95 publications

(13 citation statements)

References 13 publications

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“…For this purpose, we have computer generated amorphous carbon structures by quenching the liquid under high (megabar) pressures. This procedure resembles, in a way, the various ion-assisted deposition processes (though not directly related to their actual kinetics), since it is believed [12] that during deposition the incoming ions with high kinetic energies produce localized melting and subsequent rapid quenching of a small region.…”

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confidence: 98%

Energetics and stability of diamondlike amorphous carbon

Kelires

1992

Phys. Rev. Lett.

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Simulations of diamondlike amorphous carbon formed by quenching the liquid under high pressure indicate that two distinctly different dense phases exist. The "as-quenched" phase is metastable and mostly fourfold coordinated. Upon annealing, it converts into a more stable structure with the majority of atoms having threefold coordination. Both structures are consistent with experimental findings. The annealed phase is clearly distinguished from the low-coordinated network of evaporated a-C.PACS numbers: 61.42.+h, 64.70.Pf, 68.60.Dv Much of the current interest in amorphous carbon (a-C) is focused on diamondlike films [1,2] which are highly suitable for hard, transparent coating materials in microelectronics as well as in mechanical applications. Although the macroscopic properties of these films, such as high density, hardness, and optical transparency are well documented, their microscopic nature is under strong debate. The central issue is the extent of fourfold {sp ^) local bonding. The predominance of such atomic coordination could lead, if true, to the appealing picture of an amorphous carbon structure described by a tetrahedral continuous random network (CRN) model, such as that of Polk [3], in analogy with amorphous silicon or germanium.It is well known that the nature of a-C films depends on the preparation conditions and on hydrogen concentration. Evaporated amorphous carbon {e-O tends to be soft and black with a density of ^2.0 gem ~\ somewhat lower than that of graphite (2.27 gem ~^), and to have an optical gap of -^0.5 eV [1]. The essentially graphitic nature of e-C is furthermore established by the domination of sp~ trigonal bonding. Experimental evidence [1,4], confirmed by theoretical calculations [5,6], suggests that the vast majority of atoms, over 80%

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confidence: 98%

Energetics and stability of diamondlike amorphous carbon

Kelires

1992

Phys. Rev. Lett.

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“…At higher arc current the ion energy is higher, S is relaxed as the atoms penetrate more deeply and induces knock-on-collisions due to which underlying atoms get even deeper. Thermal spike model [11] about the S of a-C films is valid, according to which local heating and immediate chilling occurs at low ion energy that leads to high S in films but at higher ion energy the atoms create a large region to flow and reduced value of S obtained V. Acknowledgements…”

Section: Resultsmentioning

confidence: 99%

Phosphorous Doped Hydrogenated Amorphous Silicon Carbide Films Deposited by Filtered Cathodic Vacuum Arc Technique

Tripathi

Panwar

Kesarwani

et al. 2014

Physics of Semiconductor Devices

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Abstract-In the present work, we report the growth and characterization of phosphorous doped hydrogenated amorphous silicon carbide (a-SiC: H) films deposited by filtered cathodic vacuum arc technique using solid silicon target as cathode in presence of acetylene gas. The films have been characterized by x-ray diffraction, dark conductivity, activation energy, optical band gap, scanning electron microscopy, energy dispersive x-ray analysis and residual stress. The effect of arc current on the properties of P doped a-SiC: H films have been studied Index Terms-P doped a-SiC: H, Scanning electron microscopy, X-ray diffraction, Dark conductivity, Activation energy, Optical band gap, Residual stress.

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“…Although the quench from the melt simulation method is not directly related to the kinetics of the sputtering and physical vapour techniques of depositing the film, there is, however, a similarity with the ion deposition process for producing the film. The kinetics of melt-quenching [40,41] and hydrogen-induced stress relaxation [42,43] resembles the thermal spike model which assumes that during deposition the incoming ions with high kinetic energies produce localized melting and subsequent rapid quenching of small localized regions of the material. Therefore, although the network structures produced by melt-quenching do not represent the non-equilibrium structures of ion deposited films, they represent the equilibrium, relaxed ground state of typical ta-C films.…”

Section: 3mentioning

confidence: 99%

Tight-binding molecular dynamics study of the hydrogen-induced structural modifications in tetrahedral amorphous carbon

Ukpong¹

2010

Molecular Physics

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A tight-binding molecular dynamics study of the structural evolution in tetrahedral amorphous carbon networks under dynamic hydrogen saturation is presented. The incorporation of hydrogen results in higher degrees of network disorder in second-neighbour distances, and initiates orbital re-hybridization that relaxes network stress. Using the simulated structures, numerical tests are performed to verify the effectiveness of a new structural order parameter for tetrahedrally-bonded solids. It is found that the island of accessible information, within the order parameter field shows a linear dependence between the fluctuations in first-and second-nearest-neighbour distances at a preferred orientation of 36 . A comparison with similar studies on hydrogenated amorphous silicon suggests that the local network structure of tetrahedrally-bonded amorphous solids obey the same ordering rule irrespective of differences in chemical species.

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Ion-based growth of special films: Techniques and mechanisms

Cited by 95 publications

References 13 publications

Energetics and stability of diamondlike amorphous carbon

Energetics and stability of diamondlike amorphous carbon

Phosphorous Doped Hydrogenated Amorphous Silicon Carbide Films Deposited by Filtered Cathodic Vacuum Arc Technique

Tight-binding molecular dynamics study of the hydrogen-induced structural modifications in tetrahedral amorphous carbon

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