Ion-beam deposition of nanocrystalline and epitaxial silicon films using silane plasma

Khan, H.R.; Frey, Hartmut

doi:10.1016/s0257-8972(99)00110-3

Cited by 5 publications

(4 citation statements)

References 18 publications

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“…[1][2][3][4][5][6][7][8][9][10][11] The most used techniques to produce epitaxial silicon (epi-Si) films reported are: rapid thermal vapor phase epitaxy, using substrate temperatures (T S ) of above 850°C, 1 solid phase epitaxy (SPE) using T S of 400°C, 2 ion beam epitaxy using T S of above 500°C, 3 high-vacuum electron cyclotron resonance plasma deposition epitaxy with T S in the range of 450-525°C, 4 ultrahigh vacuum low pressure chemical vapor deposition (UHV-LPCVD) with T S in the range of 700-960°C, 5-7 electron cyclotron resonance plasma CVD (ECR-CVD) using T S as low as 285°C 8 and plasma-enhanced chemical vapor deposition (PECVD) using T S in the range of 150-700°C. [9][10][11] Among the techniques mentioned, PECVD offers several advantages, as the possibility to produce epi-Si films at very low T S (as low as 150°C), without the requirement of ultrahigh vacuum (UHV) systems.…”

Section: Introductionmentioning

confidence: 99%

Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

2013

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High-quality epitaxial silicon thin films have been deposited by plasma-enhanced chemical vapor deposition (PECVD) at 200°C in a standard radiofrequency (RF) PECVD reactor. We optimized a silicon tetrafluoride (SiF 4 ) plasma to clean the surface of ,100. crystalline silicon wafers and without breaking vacuum, an epitaxial silicon film was grown from SiF 4 , hydrogen (H 2 ), and argon (Ar) gas mixtures. We demonstrate that the H 2 /SiF 4 flow rate ratio is a key parameter to grow high-quality epitaxial silicon films. Moreover, by changing this ratio, we can fine-tune the composition of the interface between the crystalline silicon (c-Si) wafer and the epitaxial film. In this way, at low values of the H 2 /SiF 4 flow rate ratio, an abrupt interface is achieved. On the contrary, by increasing this ratio we can obtain a porous and fragile interface layer, composed of hydrogen-rich microcavities, which allows the transfer of the epitaxial film to foreign substrates.

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Section: Introductionmentioning

confidence: 99%

Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

2013

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“…below 500 °C [122] (see Figure 12f,g), high-vacuum electron cyclotron resonance plasma deposition epitaxy with temperatures in the range of 450-525 °C, [123] ion beam epitaxy using temperatures of above 300 °C, [124][125][126][127] electron cyclotron resonance plasma CVD (ECR-CVD) using temperatures as low as 285 °C, [128] laser-enhanced chemical vapor deposition at temperatures as low as 250 °C [129] and plasma-enhanced chemical vapor deposition (PECVD) (see Figure 12b,c) using temperatures in the range of 700 °C and down to 150 °C. [44,79,95,109,[130][131][132] It should be emphasized that PECVD is the only technique that has allowed to produce thick c-Si films at low temperatures.…”

Section: "Bottom-up" Approachesmentioning

confidence: 99%

Fabrication of Crystalline Si Thin Films for Photovoltaics

Shen

Cabarrocas

et al. 2022

Physica Rapid Research Ltrs

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Crystalline Si (c‐Si) thin films have been widely studied for their application to solar cells and flexible electronics. However, their application at large scale is limited by their fabrication process. As reviewed in this paper, many approaches have been studied, but only some of them have been made into large‐scale industrial production. The standard wire sawing of Si ingots cannot be scaled down to produce thin c‐Si wafers and films due to the brittle nature of c‐Si material, the resulting significant thickness variations, and the waste of material. Therefore, techniques based on the kerf‐less processes including “top‐down” and “bottom‐up” approaches have been developed in recent decades. In this review, photovoltaic applications of thin c‐Si wafers with thicknesses ranging from 50 μm down to 1 μm are presented first. Then, methods to fabricate c‐Si thin films based on both approaches are detailed, including slim‐cut, “smart‐cut,” epi‐free, as well as various growth processes such as molecular beam epitaxy, liquid phase epitaxy, ion beam, and chemical vapor deposition processes at a wide range of growth temperatures, from 1000 °C down to 150 °C. The advantages and disadvantages of these methods are presented and compared.

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“…Tourmaline is a kind of borosilicate mineral with a general chemical formula XY 3 Z 6 [Si 6 O 18 ][BO 3 ] 3 (O, OH, F) 4 , with X site occupied by Na, K, Ca; Y position by Mg 2+ , Fe 2+ , Fe 3+ , Al 3+ , Mn 2+ ; and Z by Al 3+ , Cr 3+ , Fe 3+ [1,2]. It was found that tourmaline had the properties of pyroelectricity and piezoelectricity [3].…”

Section: Introductionmentioning

confidence: 99%

“…But as far as we know there are no reports on the tourmaline film, which may have peculiar properties and potential application as electromagnetic shielding material. Ion-beam deposition has been widely used in preparation of metal and mineral films [5][6][7][8]. This work is to develop a method to obtain tourmaline film.…”

Section: Introductionmentioning

confidence: 99%

Ion-beam deposition of tourmaline film on glass

Liu

et al. 2008

Journal of Non-Crystalline Solids

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Ion-beam deposition of nanocrystalline and epitaxial silicon films using silane plasma

Cited by 5 publications

References 18 publications

Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

Fabrication of Crystalline Si Thin Films for Photovoltaics

Ion-beam deposition of tourmaline film on glass

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