Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire

Linnros, Jan; Svensson, B. G.; Holmén, G.

doi:10.1103/physrevb.30.3629

Cited by 144 publications

(36 citation statements)

References 36 publications

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“…This issue will be addressed later. The abovementioned conclusions were also confirmed by other experimental results Linnros et al, 1984Linnros et al, , 1985Miyao et al, 1986;Williams et al, 1985). For instance, Linnros (Linnros et al, 1985) reported a clear experimental evidence of a linear dependence of the ion-induced recrystallization rate on the nuclear energy loss.…”

Section: Influence Of the Beam Parameters In The Ibiec Processsupporting

confidence: 78%

“…For instance, at 250 °C the ion-induced growth rate is 0.07 Å/s while, an extrapolation of the thermal data gives a rate of only 10 -10 Å/s. Furthermore, in the temperature range shown, the IBIEC presents an Arrhenius-like temperature dependence with an apparent activation energy of (0.32  0.05) eV as also demonstrated by several other experiments Linnros et al, 1984;Williams et al, 1985).…”

Section: Temperature Dependencementioning

confidence: 61%

“…The sample temperature during irradiation is a fundamental variable in the IBIEC process Linnros et al, 1984;Priolo et al, 1988Priolo et al, , 1989Williams et al, 1985). Figure 5 shows, in an Arrhenius plot, the ion-induced growth rate (or recrystallization) as a function of the reciprocal temperature of an a-Si/Si(100) layer recrystallized by 600 keV Kr 2+ ion irradiation (dose: 1x10 15 Kr/cm 2 and ion flux: 1x10 12 Kr/cm 2 s).…”

Section: Temperature Dependencementioning

confidence: 99%

See 2 more Smart Citations

Ion-Beam-Induced Epitaxial Recrystallization Method and Its Recent Applications

Lang¹,

Menezes²,

Santos³

et al. 2012

Recrystallization

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Section: Influence Of the Beam Parameters In The Ibiec Processsupporting

confidence: 78%

Section: Temperature Dependencementioning

confidence: 61%

Section: Temperature Dependencementioning

confidence: 99%

See 1 more Smart Citation

Ion-Beam-Induced Epitaxial Recrystallization Method and Its Recent Applications

Lang¹,

Menezes²,

Santos³

et al. 2012

Recrystallization

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“…An alternative method to conventional thermal annealing to restore the crystallinity of heavily damaged crystals is the use of the ion-beam induced epitaxial crystallisation (IBIEC) process [41][42][43]. It consists in bombarding the samples with ion species having an energy such that the slowing down is still dominated by nuclear collisions, but with an ion projected range quite deeper than the thickness of the defective layer.…”

Section: Swift Heavy Ion Beam Induced Epitaxialmentioning

confidence: 99%

Damage Accumulation in Nuclear Ceramics

et al. 2011

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Ceramics are key engineering materials in many industrial domains. The evaluation of radiation damage in ceramics placed in a radiative environment is a challenging problem for electronic, space and nuclear industries. Ion beams delivered by various types of accelerators are very efficient tools to simulate the interactions involved during the slowing-down of energetic particles. This article presents a review of the radiation effects occurring in nuclear ceramics, with an emphasis on new results concerning the damage build-up. Ions with energies in the keV-GeV range are considered for this study in order to explore both regimes of nuclear collisions (at low energy) and electronic excitations (at high energy). The recovery, by electronic excitation, of the damage created by ballistic collisions (swift heavy ion beam induced epitaxial recrystallization process) is also reported. 61.80.Jh, 61.82.Ms, 61.85.+p, 68.37.Lp PACS Introductory remarksCeramics are refractory solids which possess very interesting physico-chemical properties, such as high strength, low thermal expansion, chemical stability, strong resistance against oxidation, good behavior under irradiation, etc. These materials are therefore often employed in hostile media where efficient use of energy is a prime need, e.g. extreme temperatures, corrosive surroundings, radiative environment, etc. Examples of the interest of ceramics for applications are provided by electronic, space and nuclear industries. For instance, such materials are nowadays widely used for surface coating and electronic packaging, and they are envisioned in a near future for the safe and long-term disposal of radioactive waste, and the development of inert fuel matrices for actinide transmutation. They may also be employed as cladding materials for gas-cooled fission reactors and structural components in fusion reactors. For all these applications, there is an urgent need of data concerning the behavior of nuclear ceramics upon irradiation.The topic that is concerned here is so broad that it requires a whole book to cover the main issues; the state of knowledge was regularly upgraded in thorough reviews [1][2][3][4][5][6][7][8][9][10]. To deal it in a short article, we focus on the presentation of a few remarkable examples concerning the ion-beam modifications of nuclear ceramics (zirconia, pyrochlores, silicon carbide, etc.) with an emphasis on the mechanisms leading to damage cre- * corresponding author; e-mail: thome@csnsm.in2p3.fr ation and phase transformations. We report typical results obtained using advanced characterization techniques (the Rutherford backscatteringspectrometry associated to channeling (RBS/C), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman) for ceramics irradiated with ions in a broad energy range (from keV to GeV) in order to explore both nuclear collision and electronic excitation regimes.The first section is devoted to the presentation of general considerations about the damage build-up in ion--irradiated crystals and of a new mo...

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“…Ion beam-induced epitaxial crystallisation (IBIEC) is a promising route to achieve solid phase epitaxial growth in silicon and other materials at considerably lower target temperatures [3][4][5][6][7][8][9] . IBIEC has advantages of low processing temperature and layer-by-layer crystallisation.…”

Section: Introductionmentioning

confidence: 99%

Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

Som¹,

Sinha

Ghatak³

et al. 2009

DSJ

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Studies on MeV heavy ion beam-induced epitaxial crystallisation of a buried silicon nitride layer are reported. Transmission electron micrographs and selected area diffraction patterns have been used to study the recrystallisation of an ion beam-synthesised layer. Complete recrystallisation of the silicon nitride layer having good quality interfaces with the top-and the substrate-Si has been obsorved. Recrystallisation is achieved at significantly lower temperatures of 100 and 200 O C for oxygen and silver ions, respectively. The fact that recrystallisation is achieved at the lowest temperature for the oxygen ions is discussed on the basis of energy loss processes.

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Ion-beam-induced epitaxial regrowth of amorphous layers in silicon on sapphire

Cited by 144 publications

References 36 publications

Ion-Beam-Induced Epitaxial Recrystallization Method and Its Recent Applications

Ion-Beam-Induced Epitaxial Recrystallization Method and Its Recent Applications

Damage Accumulation in Nuclear Ceramics

Swift Heavy Ion Beam-induced Recrystallisation of Buried Silicon Nitride Layer

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