Ion beam induced evolution of surface morphology and optical properties of SnO2–ZnO nanocomposite thin films

Bhardwaj, Neha; Mohapatra, Satyabrata

doi:10.1016/j.ceramint.2015.03.071

Cited by 3 publications

(3 citation statements)

References 53 publications

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“…Previously, some researchers found that ZnO films doped with Sn could produce special morphological nanostructures. [ 22 ] Sn‐doped ZnO films are prone to exhibit special morphology, which is usually ascribed to the fact that the segregated Sn clusters as catalysts facilitate the formation of ZnO nanostructures on the film surface. It should be pointed out that only when sufficient energy is obtained can zinc atoms undergo surface migration and stay in suitable positions to nucleate with O and gradually grow into ZnO nanostructures, finally forming a special film morphology.…”

Section: Resultsmentioning

confidence: 99%

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Deposition and Characterization of Zn–Sn–O (ZSO) Thin Films with Novel Optical Properties

Luo

Qian

et al. 2022

Physica Status Solidi (a)

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ZnO and SnO 2 are two important wide bandgap semiconductor materials, which have applications in many fields. [1][2][3][4][5][6] In order to tailor the properties of ZnO and SnO 2 , Sn-doped ZnO and Zn-doped SnO 2 have been studied. [7][8][9][10] Recently, nanocomposites composed of ZnO and SnO 2 and ternary compounds composed of Zn, Sn, and O have also attracted wide attention from scholars and engineers in different fields. For instance, Lee et al. [11] used pulsed laser deposition to prepare ZnO-SnO 2 composite films; those composite films were amorphous after annealed at 300 C but had good photoelectric properties and could be used to prepare high-quality field effect transistors. T. Tharsika et al. [12] used spray pyrolysis technique to prepare a ZnO-SnO 2 composite film and found that the morphology of the sample was controlled by the heat treatment and the Zn:Sn ratio in the growth solution. Yan et al. [13] prepared ZnO/ZnSnO 3 composites by hydrothermal method and found that those composites had better gas sensitivity than pure ZnSnO 3 . Zheng et al. [14] synthesized a ZnO-SnO 2 nanocomposite through a two-step route and found that the sensor prepared from the composite material showed better gas sensitivity to chlorine than the sensor prepared from pure SnO 2 . The ZnO-SnO 2 nanocomposites and ternary compounds composed of Zn, Sn, and O have attracted great attention from researchers worldwide because they have potential applications in field effect transistors, [11] solar cells, [14,15] thin-film transistors, [16] gas sensors, [17,18] photocatalysts, [19] and other fields.As we all know, the preparation methods and deposition parameters of nanomaterials have a large influence on the properties of nanomaterials. For ZnSnO nanomaterials, the impact of different preparation methods is particularly obvious. Normally, the ZnSnO films obtained by the physical vapor method show smooth surface and uniform grains. [11,13] However, ZnSnO thin films deposited by the wet chemical method show higher controllability of morphology and optoelectronic properties. [20,21] For instance, Tharsika et al. [20] fabricated ZnO-SnO 2 composite films by spray pyrolysis; the microstructure and optical properties of the ZnO-SnO 2 films were not only related to the atomic ratio of Zn to Sn in growth solution, but also related to the heat-treatment temperature. The ZnO-SnO 2 composite film heat-treated at an appropriate temperature showed a double-layered structure: The bottom layer was an amorphous Zn x Sn y O z compound, and the upper layer was made up by many rod-like or sheet-like ZnO nanostructures. The sol-gel process is an attractive way for preparing metal oxide nanofilms and is particularly suitable for preparing multicomponent metal oxide films. To our knowledge, up to present, there is no paper to report a two-layered film composed of crystalline ZnO and amorphous Zn x Sn y O z compound deposited using the sol-gel technique. In this research, the authors have prepared ZnSnO thin films with unique microstructure and optica...

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Section: Resultsmentioning

confidence: 99%

“…Therefore, an appropriate annealing temperature or laser irradiation is an important external condition. [20,22] EDX analysis was performed on the sample heattreated at 500 C so that to learn the distribution of elements in the sample. Figure 2 shows the elemental mapping images of the sample.…”

Section: The Structural and Morphological Evolution Of The Samplesmentioning

confidence: 99%

Deposition and Characterization of Zn–Sn–O (ZSO) Thin Films with Novel Optical Properties

Luo

Qian

et al. 2022

Physica Status Solidi (a)

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“…Ion beams have been used to modify semiconductors since the 1950s [18][19][20] to control properties including electrical [21,22], optical [22][23][24][25], mechanical [21,26], thermal [27] and surface morphology [23,28]. Such methods can be similarly applied to the tailoring of these characteristics in semiconductor NWs [1,4,13,29,30].…”

Section: Introductionmentioning

confidence: 99%

Ion-beam-induced bending of semiconductor nanowires

Hanif

Camara²,

Tunes³

et al. 2018

Nanotechnology

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The miniaturisation of technology increasingly requires the development of both new structures as well as novel techniques for their manufacture and modification. Semiconductor nanowires (NWs) are a prime example of this and as such have been the subject of intense scientific research for applications ranging from microelectronics to nano-electromechanical devices. Ion irradiation has long been a key processing step for semiconductors and the natural extension of this technique to the modification of semiconductor NWs has led to the discovery of ion beam-induced deformation effects. In this work, transmission electron microscopy with in situ ion bombardment has been used to directly observe the evolution of individual silicon and germanium NWs under irradiation. Silicon NWs were irradiated with either 6 keV neon ions or xenon ions at 5, 7 or 9.5 keV with a flux of 3 × 10 ions cm s. Germanium NWs were irradiated with 30 or 70 keV xenon ions with a flux of 10 ions cm s. These new results are combined with those reported in the literature in a systematic analysis using a custom implementation of the transport of ions in matter Monte Carlo computer code to facilitate a direct comparison with experimental results taking into account the wide range of experimental conditions. Across the various studies this has revealed underlying trends and forms the basis of a critical review of the various mechanisms which have been proposed to explain the deformation of semiconductor NWs under ion irradiation.

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Preparation of highly crystalline zinc hydroxystannate thin film and investigation of its structure and luminescence behavior with various annealing temperatures

Xian

Miao

et al. 2020

Optical Materials

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Ion beam induced evolution of surface morphology and optical properties of SnO2–ZnO nanocomposite thin films

Cited by 3 publications

References 53 publications

Deposition and Characterization of Zn–Sn–O (ZSO) Thin Films with Novel Optical Properties

Deposition and Characterization of Zn–Sn–O (ZSO) Thin Films with Novel Optical Properties

Ion-beam-induced bending of semiconductor nanowires

Preparation of highly crystalline zinc hydroxystannate thin film and investigation of its structure and luminescence behavior with various annealing temperatures

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