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Valles, James M.; White, Alice E.; Short, K. T.; Dynes, R. C.; Garno, J. P.; Levi, A. F. J.; Anzlowar, M.; Baldwin, K. W.

doi:10.1103/physrevb.39.11599

Cited by 158 publications

(48 citation statements)

References 17 publications

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“…Using TRIM code 12 and suitable assumptions, we have computed a gaussian-like distribution of defects centered on the 20 nm wide slit whose standard deviation is roughly 80 nm 13 , much smaller than a crude estimate of 150 nm or so 4 , and in good agreement with experimental observations : the normal state resistance measured corresponds to the expected width of the channel within a few percents, even for the 1 µm wide ones, confirming that the straggling is much smaller than this value ; based on the actual R(T) curve of a pristine channel, we have been able to compute the one of irradiated samples with a very good accuracy (Figure 3). The increase in resistivity and the decrease in T c as a function of the created defects have been taken from the literature 3,[14][15][16] . The resistance of the whole irradiated channel has been then calculated by integrating the resistivity over the defects distribution.…”

Section: /06/05mentioning

confidence: 99%

High-quality planar high-Tc Josephson junctions

Bergeal

Grison

Lesueur

et al. 2005

Applied Physics Letters

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Reproducible high-T c Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge (1 to 5 µm wide) is firstly designed by ion irradiating a c-axis-oriented YBa 2 Cu 3 O 7-δ film through a gold mask such as the non-protected part becomes insulating. A lower T c part is then defined within the bridge by irradiating with a much lower fluence through a narrow slit (20 nm) opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. This process can be used to produce complex Josephson circuits. a) Electronic

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Section: /06/05mentioning

confidence: 99%

High-quality planar high-Tc Josephson junctions

Bergeal

Grison

Lesueur

et al. 2005

Applied Physics Letters

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“…Irradiation could displace oxygen from its original sites to interstitial positions as discussed previously in other conducting perovskites. 12 This would have a twofold effect. First, vacancies would break the conduction path within the RuO 6 octahedra, responsible for the metallic properties, triggering a metal-insulator transition.…”

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confidence: 99%

“…Ion irradiation is known to produce local displacements of oxygen atoms in YBCO causing significant changes in resistivity and T c . 12 In this letter we present results on the effect of growth temperature and ion irradiation on the electrical and magnetic properties of dc-sputtered SrRuO 3 thin films. We show that by increasing the irradiation dose, it is possible to tune the Curie temperature in a continuous manner up to the vicinity of the metal-insulator transition.…”

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Metal–insulator transition in SrRuO3 induced by ion irradiation

Sefrioui

Arias

Navacerrada

et al. 1998

Applied Physics Letters

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We have studied the effect of He ϩ irradiation on the electrical resistivity and Curie temperature of ferromagnetic SrRuO 3 thin films. An evolution from metallic to insulating behavior is observed when He ϩ ion fluence is increased, suggesting a metal-insulator transition. Damage by ion irradiation produces a strong decrease of the Curie temperature. On the other hand, no significant change in T c ͑ϳ160 K͒ takes place in fresh samples grown at different substrate temperatures. We discuss the possible correlation between structural changes induced by irradiation, which reflect in an increase of the pseudocubic lattice parameter, and the observed depression of T c . © 1998 American Institute of Physics. ͓S0003-6951͑98͒03349-X͔ SrRuO 3 is an orthorhombically distorted perovskite ͑space group Pbnm͒, and the only example of ferromagnetic ordering ͑with a Curie temperature T c , of 165 K͒ in conducting 4d transition-metal oxides. 1,2 This compound has a 4d 4 low spin configuration (Sϭ1) and is believed to have a narrow * band resulting from Ru t 2g and O 2 p orbitals, which governs magnetic ordering. 3,4 The actual nature of magnetism in this material, usually considered as an example of pure itinerant magnetism, 5 is not fully understood yet. This system can be included in the group of the so-called ''bad metals,'' 5,6 strongly correlated electron systems showing remarkable electrical and magnetic properties. A common feature of these materials is the high value of their roomtemperature electrical resistivities, close to the theoretical limit for the metallic state ͑Ioffe-Regel limit͒. From the point of view of possible technological applications, both the crystallographic structure ͑pseudocubic perovskite͒ and lattice parameters of this material, close to those of ͑YBCO͒, make it a promising candidate for the fabrication of ͑SNS͒ Josephson junctions of high-T c superconducting oxides. 7 In addition, its conducting character makes it a suitable material for electrodes in other types of devices based on perovskite oxides, as epitaxial conducting oxide-ferroelectric or superconduction-ferroelectric heterostructures. 8 Structural distortions are known to play a central role in the magnetic properties of SrRuO 3 . The absence of ferromagnetic ordering in the isostructural CaRuO 3 has been explained in terms of a stronger orthorhombical distortion in this compound which changes the sign of the magnetic interaction. 9 Both hydrostatic and chemical pressure resulting from the partial substitution of Sr 2ϩ ͑0.62 A͒ by the bigger Ca 2ϩ ͑1.06 A͒ give rise to a decrease of the Curie temperature, but the system remains metallic. This has been explained in terms of the magnetism of this compound being very sensitive to the Ru-Ru distance. 10 On the other hand, substitution of Ru by Ti up to 20% rapidly reduces the critical temperature and causes an increase of the resistivity which undergoes a crossover from metallic to semiconducting behavior at low temperatures. Once again, this has been proposed to occur as a result of local ...

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“…Since chain oxygen atoms are the most loosely bound specie in the structure, the most probable defects are those atoms displaced into the vacant O͑5͒ along the a axis. 22 These defects scatter carriers in the planes and probably reduce the critical temperature by pair breaking. 23 I-V curves were measured in as grown and irradiated samples.…”

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confidence: 99%

Vortex liquid entanglement in irradiatedYBa2Cu3O7
Sefrioui
¹
,
Arias
²
,
González
³

et al. 2001
Phys. Rev. B
43
4
23
1
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Epitaxial YBa 2 Cu 3 O 7 thin films, grown by high-pressure dc sputtering, are irradiated with He ϩ ions at 80 keV with doses between 10 14 and 10 15 cm Ϫ2 . Irradiation reduces the critical temperature but it does not modify the carrier concentration. Angle-dependent resistivity is used to show that the mass anisotropy does not change upon irradiation. The melting transition in magnetic fields applied parallel to the c axis is analyzed by I-V critical scaling, and all irradiated and nonirradiated samples show a three-dimensional vortex glass transition with the same critical exponents. The dissipation in the liquid state is analyzed in terms of the activation energy of the magnetoresistance in a perpendicular magnetic field. While as-grown samples show an activation energy depending as 1/H on the applied magnetic field, irradiated samples show a dependence as 1/H 0.5 , characteristic of plastic deformation of vortices. This is discussed in terms of the point disorder introduced by ion irradiation.

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Ion-beam-induced metal-insulator transition inYBa2Cu3O

Cited by 158 publications

References 17 publications

High-quality planar high-Tc Josephson junctions

High-quality planar high-Tc Josephson junctions

Metal–insulator transition in SrRuO3 induced by ion irradiation

Vortex liquid entanglement in irradiatedYBa2Cu3O7
Sefrioui
¹
,
Arias
²
,
González
³

et al. 2001
Phys. Rev. B
43
4
23
1
View full text Add to dashboard Cite

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Ion-beam-induced metal-insulator transition inYBa2Cu3O

Cited by 158 publications

References 17 publications

High-quality planar high-Tc Josephson junctions

High-quality planar high-Tc Josephson junctions

Metal–insulator transition in SrRuO3 induced by ion irradiation

Vortex liquid entanglement in irradiatedYBa2Cu3O7Sefrioui1, Arias2, González3 et al. 2001Phys. Rev. B434231View full textAdd to dashboardCite

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Product

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About

Vortex liquid entanglement in irradiatedYBa2Cu3O7
Sefrioui
¹
,
Arias
²
,
González
³

et al. 2001
Phys. Rev. B
43
4
23
1
View full text Add to dashboard Cite