Ion-beam-induced porosity of GaN

Kucheyev, S. O.; Williams, James S.; Jagadish, Chennupati; Zou, Jin; Craig, Vincent S. J.; Li, Gang

doi:10.1063/1.1290722

Cited by 72 publications

(61 citation statements)

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“…1. RBS/C spectra showing the damage buildup for 10 keV H ion bombardment of GaN at Ϫ196°C with a beam flux of 1.1ϫ10 13 cm Ϫ2 s Ϫ1 . Implantation doses ͑in cm Ϫ2 ) are indicated in the figure.…”

Section: Resultsmentioning

confidence: 99%

“…33 There may also be local material decomposition occurring within dense collision cascades, as has been discussed in more detail elsewhere. [12][13][14] Both these effects would also be expected to result in a superlinear dependence of ion-beam-generated defects on the density of collision cascades.…”

Section: Role Of Collision-cascade Densitymentioning

confidence: 99%

“…13,14 Indeed, after amorphization of GaN, ion bombardment has been shown to result in material dissociation with the formation of N 2 gas bubbles embedded into a Ga-rich matrix of amorphous GaN. Such dramatic decomposition has been attributed to ionbeam-induced stoichiometric imbalance.…”

Section: Introductionmentioning

confidence: 99%

“…Recent ion-implantation studies [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] have revealed that, unlike the situation for mature semiconductors such as Si and GaAs, GaN exhibits a range of intriguing behavior involving extreme property changes under ion bombardment. 19 In particular, it has been shown that dynamic annealing processes ͑i.e., defect-interaction processes͒ in GaN are extremely efficient even during heavy-ion bombardment at liquid-nitrogen temperature.…”

Section: Introductionmentioning

confidence: 99%

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Effect of ion species on the accumulation of ion-beam damage inGaN

et al. 2001

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Wurtzite GaN epilayers bombarded with a wide range of ion species ͑10 keV 1 H, 40 keV 12 C, 50 keV 16 O, 600 keV 28 Si, 130 keV 63 Cu, 200 keV 107 Ag, 300 keV 197 Au, and 500 keV 209 Bi) are studied by a combination of Rutherford backscattering/channeling ͑RBS/C͒ spectrometry and cross-sectional transmission electron microscopy. Results show that strong dynamic annealing processes lead to a complex dependence of the damage-buildup behavior in GaN on ion species. For room-temperature bombardment with different ion species, bulk disorder, as measured by RBS/C, saturates at some level that is below the random level, and amorphization proceeds layer-by-layer from the GaN surface with increasing ion dose. The saturation level of bulk disorder depends on implant conditions and is much higher for light-ion bombardment than for the heavy-ion irradiation regime. In the case of light ions, when ion doses needed to observe significant lattice disorder in GaN are large (տ10 16 cm Ϫ2 ), chemical effects of implanted species dominate. Such implanted atoms appear to stabilize an amorphous phase in GaN and/or to act as effective traps for ion-beam-generated mobile point defects and enhance damage buildup. In particular, the presence of a large conce ntration of carbon in GaN strongly enhances the accumulation of implantation-produced disorder. For heavier ions, where chemical effects of implanted species seem to be negligible, an increase in the density of collision cascades strongly increases the level of implantation-produced lattice disorder in the bulk as well as the rate of layerby-layer amorphization proceeding from the surface. Such an increase in stable damage and the rate of planar amorphization is attributed to ͑i͒ an increase in the defect clustering efficiency with increasing density of ion-beam-generated defects and/or ͑ii͒ a superlinear dependence of ion-beam-generated defects, which survive cascade quenching, on the density of collision cascades. Physical mechanisms responsible for such a superlinear dependence of ion-beam-generated defects on collision cascade density are considered. Mechanisms of surface and bulk amorphization in GaN are also discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Role Of Collision-cascade Densitymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of ion species on the accumulation of ion-beam damage inGaN

et al. 2001

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“…3 is the formation of large bubbles or voids in GaN amorphized by heavy-ion bombardment and subsequently annealed. 8 A comparison of the layered structures illustrated in Figs. 2 and 3 suggests that elevated-temperature ion bombardment results in large erosion of the surface.…”

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Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment

Kucheyev

Williams

Jagadish

et al. 2000

Journal of Applied Physics

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The effects of elevated-temperature ion bombardment of wurtzite GaN films preamorphized by ion implantation are studied by Rutherford backscattering/channeling spectrometry and transmission electron microscopy. Amorphous layers annealed in vacuum at 500 °C exhibit polycrystallization. Bombardment of amorphous layers with 2 MeV 63Cu+ ions at elevated temperatures leads to anomalous erosion of GaN (with a sputtering yield of ∼102 at 500 °C), rather than to ion-beam-induced epitaxial crystallization. Temperature dependence of the erosion rate suggests that such a large sputtering yield results from a two-step process of (i) thermally- and ion- beam-induced material decomposition and (ii) ion beam erosion of a highly N-deficient near-surface layer of GaN. This study shows that amorphization during ion implantation should be avoided due to the present inability to epitaxially recrystallize amorphous layers in GaN.

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GaN Nano Air Channel Diodes: Enabling High Rectification Ratio and Neutron Robust Radiation Operation

Wei,

Chen,

Zhang

et al. 2024

Advanced Science

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Nano air channel transistors (NACTs) provide numerous advantages over traditional silicon devices, including faster switching speeds, higher operating frequencies, and enhanced radiation hardness attributable to the ballistic transport of electrons. In the development of field‐emission‐based integrated circuits, low‐power consumption rectifying nano air channel diodes (NACDs) play a crucial role. However, achieving rectification characteristics in NACDs is challenging due to their structural and material symmetry. This paper proposes a vertical GaN NACD with a consistent nano air channel fabricated using IC‐compatible processes. The GaN NACD exhibits an exceptionally low turn‐on voltage of 0.3 V while delivering a high output current of 5.02 mA at 3 V. Notably, it demonstrates a high rectification ratio of up to 2.2 × 105, attributing to significant work function disparities within the GaN‐Au structure, coupled with the reduction of Au surface roughness to minimize reverse current. Furthermore, the junction‐free structure and superior material properties of GaN enable the NACD to be suitable for use in radiation‐rich environments. With its potential as a fundamental component of ultrafast and ultrahigh‐frequency integrated circuits, this intriguing and cost‐effective rectifying diode is anticipated to garner widespread interest within the electronics community.

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Ion-beam-induced porosity of GaN

Cited by 72 publications

References 10 publications

Effect of ion species on the accumulation of ion-beam damage inGaN

Effect of ion species on the accumulation of ion-beam damage inGaN

Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment

GaN Nano Air Channel Diodes: Enabling High Rectification Ratio and Neutron Robust Radiation Operation

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