Ion-beam induced silver doping in the Ag2Se/GeSe2-resist system

A General Approach to Semimetallic, Ultra‐High‐Resolution, Electron‐Beam Resists

“…[11] As an approach to solving the issues of fine pattern transferring, some inorganic resists [e.g., LiF(AlF 3 ), Ge x Se 1-x ] are developed. [9,12] Although these inorganic resists can achieve high resolutions and dry etching resistances, they cause other issues in lithography, such as difficult lift-off. [9,13] Chemical amplification (modifying the molecular structure or chemical composition of organic resist) is a potential way to solve the issues faced by the organic resists as it is an effective method to improve the properties of organic polymers.…”

Microelectronic Interconnections and Assembly

“…for CF4 [ 50 ]. Sensitivity of Ag-SelGe-Se inorganic resist to the synchrolron radiation was 0.3-3 times that of PMMA resist, the y values of 3.1 -3.5 obtained indicated high contrast [ 67 ].…”

“…During and as a result of exposure in the exposure sites metal (Ag) penetrates into ChVS layer forming the intermediate doped layer,that is growing as the sample is illuminated. Under irradiation with electron,ion beams,or X-rays the type of kinetic curve is similiar (Fig.4-6) [3,29,50]. Under irradiation with electron,ion beams,or X-rays the type of kinetic curve is similiar (Fig.4-6) [3,29,50].…”

“…ChVS-metal systems are sensitive also to the ion beams [ 11,14,35,50,65 ]. Under exposure of such media by various ions ( It,Ar+,He+) and the consequent treatment they behave as negative resists with the unique lithographic properties.…”

“…Characteristic curves of the Ag2Se/GeSe2 resist system after irradiation with 60 keY He+ ions and RIE etching in CF4 -(left) and SF6 (right)[50]. U..LL' I~-L-~..L.....L..I...J--.....…”