Ion beam induced surface patterns due to mass redistribution and curvature-dependent sputtering

Bobes, Omar; Zhang, Kun; Hofsäß, H.

doi:10.1103/physrevb.86.235414

Cited by 46 publications

(45 citation statements)

References 27 publications

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“…In a recent paper, my group has published a study on ripple formation on a-C films under Xe ion irradiation [23]. In this study, the ion fluence was chosen just high enough to observe ripple patterns, to ensure the comparison with linear theories of ripple formation.…”

Section: Simulations For Xe Ions On A-cmentioning

confidence: 99%

“…This study reports a dominating contribution of mass transport, whereas curvature-dependent erosion seems to be almost negligible. Our own previous calculations using curvature coefficients for mass redistribution from SDTrimSP and curvature-dependent erosion according to the BH model revealed that the transition region between parallel and perpendicular ripples is determined by curvature-dependent erosion [23].…”

Section: Simulations For 1 Kev Ar On Simentioning

confidence: 99%

“…Xe ion beam irradiation of amorphous carbon films in the energy regime 200 eV up to 10 keV [23] and also the analysis of ripple patterns after 5 and 10 keV ion beam irradiation of Si [24] support the contribution of mass redistribution (CV model) for parallel ripple pattern formation in the angular regime between about 45°and 70°. On the other hand, curvature-dependent sputtering (BH model) was found to determine the transition from parallel to perpendicular oriented ripples or a flat surface around angles of 75°-85° [23,24].…”

Section: Introductionmentioning

confidence: 99%

“…In this work I discuss surface pattern formation by ioninduced atomic mass transport and curvature-dependent sputtering based on 3-dimensional collision cascade data, determined with Monte Carlo simulations using the SDTrimSP program [23,24,36]. From SDTrimSP I derive ion incidence angle-dependent input parameters, like the 3-dimensional recoil distribution, the 3-dimensional atomic mass transport and the lateral distribution of emission sites of sputtered atoms for a variety of ion-target combinations.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, curvature-dependent sputtering (BH model) was found to determine the transition from parallel to perpendicular oriented ripples or a flat surface around angles of 75°-85° [23,24]. In both studies, it was assumed that curvature-dependent erosion contributes according to the BH model with the assumption of Sigmund's ellipsoidal energy deposition [1].…”

Section: Introductionmentioning

confidence: 99%

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Surface instability and pattern formation by ion-induced erosion and mass redistribution

Hofsäß

2013

Appl. Phys. A

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The contribution of curvature dependent sputtering and mass redistribution to ion-induced self-organized formation of periodic surface nanopatterns is revisited. Ion incidence angle-dependent curvature coefficients and ripple wavelengths are calculated from 3-dimensional collision cascade data obtained from binary collision Monte Carlo simulations. Significant modifications concerning mass redistribution compared to the model of Carter and Vishnyakov and also models based on crater functions are introduced. Furthermore, I find that curvature-dependent erosion is the dominating contribution to pattern formation, except for very low-energy irradiation of a light matrix with heavy ions. The major modifications regarding mass redistribution and ion-induced viscous flow are related to the ion incidence angle-dependent thickness of the irradiated layer. A smaller modification concerns the relaxation of inward-directed mass redistribution. Ioninduced viscous flow in the surface layer also depends on the layer thickness and is thus strongly angle dependent. Simulation results are presented and compared to a variety of published experimental results. The simulations show that in most cases curvature-dependent erosion is the dominant contribution to surface instability and ripple pattern formation and also determines the pattern orientation transition. The simulations predict the occurrence of perpendicular ripple patterns at larger ion incidence angles, in agreement with experimental observations. Mass redistribution causes stabilization of the surface at near-normal ion incidence angles and dominates pattern formation only at very low ion energies.

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Section: Simulations For Xe Ions On A-cmentioning

confidence: 99%

Section: Simulations For 1 Kev Ar On Simentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Surface instability and pattern formation by ion-induced erosion and mass redistribution

Hofsäß

2013

Appl. Phys. A

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Heterophase Interface and Surface Functionalization of TiO_x/TiSi_x Metastable Nanofilms

Echeverrigaray

Figueroa

Zanatta

et al. 2022

Adv Materials Inter

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In this paper, topographically asymmetric TiOx/TiSix metastable ultrathin (nano)films on SiO2/Si(100) are produced by controlling interface reactions through ion beam synthesis. The film growth process involves a dual ion beam system, combining Ar+ sputtering a Ti target and in situ postirradiation (Ar+ + H2+ ion etching) at normal incidence to modify the surface morphology. The film's production and characterization are challenging due to the formation of a complex mixed interface+layers (heterophases) containing nanocrystalline and amorphous compounds of Ti and Si. The results for different ion etching times (0–600 s) are systematically presented and analyzed. With the experimental+theoretical information, it is possible to deduce that the heterophase interface is originated by oxide intermixing in combination with the formation of titanium silicides taking place at the early stages of growth. The reactivity of oxygen and hydrogen species is the dominating factor influencing the metastable film growth mediated by solid‐state phase reactions. Given its crucial role at the (Ti/Si):O interface, the chemical route and control of intrinsic defects (non‐stoichiometry) are defined by domain ordering mechanisms followed by surface restructuring. In view of their main characteristics, taken altogether, the current functional metastable films represent a promising alternative for high‐performance photonic and optoelectronic applications.

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Tailoring and investigation of surface chemical nature of virgin and ion beam modified muscovite mica

Bhowmik

Karmakar

2019

Surface & Interface Analysis

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We report that the surface chemical properties of muscovite mica [KAl 2 (Si 3 Al) O 10 (OH) 2 ] like important multi-elemental layered substrate can be precisely tailored by ion bombardment. The detailed X-ray photoelectron spectroscopic studies of a freshly cleaved as well as 12-keV Ar + and N + ion bombarded muscovite mica surfaces show immense changes of the surface composition due to preferential sputtering of different elements and the chemical reaction of implanted ions with the surface.We observe that the K atoms on the upper layer of mica surface are sputtered most during the N + or Ar + ions sputtering, and the negative aluminosilicate layer is exposed. Inactive Ar atoms are trapped, whereas chemically reactive N atoms form silicon nitride (Si 3 N 4 ) and aluminum nitride (AlN) during implantation. On exposure to air after ion bombardment, the mica surface becomes more active to adsorb C than the virgin surface. The adsorbed C reacts with Si in the aluminosilicate layer and forms silicon carbide (SiC) for both Ar and N bombarded mica surfaces. Besides the surface chemical change, prolonged ion bombardment develops a periodic ripple like regular pattern on the surface.

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Ion beam induced surface patterns due to mass redistribution and curvature-dependent sputtering

Cited by 46 publications

References 27 publications

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Heterophase Interface and Surface Functionalization of TiO_x/TiSi_x Metastable Nanofilms

Tailoring and investigation of surface chemical nature of virgin and ion beam modified muscovite mica

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Ion beam induced surface patterns due to mass redistribution and curvature-dependent sputtering

Cited by 46 publications

References 27 publications

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Surface instability and pattern formation by ion-induced erosion and mass redistribution

Heterophase Interface and Surface Functionalization of TiOx/TiSix Metastable Nanofilms

Tailoring and investigation of surface chemical nature of virgin and ion beam modified muscovite mica

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Product

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Heterophase Interface and Surface Functionalization of TiO_x/TiSi_x Metastable Nanofilms