2019
DOI: 10.1016/j.nimb.2018.12.038
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Ion beam measurements for the investigation of TiN thin films deposited on different substrates by vacuum arc discharge

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Cited by 10 publications
(7 citation statements)
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“…These obtained concentration values (see Table 2) of both Carbon and Hydrogen might not be totally realistic due to errors that could arise because of the extrapolation of concentration values of C, N and O to 100% to obtain Hydrogen concentration. In fact, the use of 3 MeV protons or 3 to 5 MeV alpha particles (see for instance [ 45,46 ] ) should certainly be more accurate to determine the stoichiometry of the PEEK samples as the signals of C, N and O will be enhanced. Consequently, the RBS spectrum will be accurately fitted.…”
Section: Resultsmentioning
confidence: 99%
“…These obtained concentration values (see Table 2) of both Carbon and Hydrogen might not be totally realistic due to errors that could arise because of the extrapolation of concentration values of C, N and O to 100% to obtain Hydrogen concentration. In fact, the use of 3 MeV protons or 3 to 5 MeV alpha particles (see for instance [ 45,46 ] ) should certainly be more accurate to determine the stoichiometry of the PEEK samples as the signals of C, N and O will be enhanced. Consequently, the RBS spectrum will be accurately fitted.…”
Section: Resultsmentioning
confidence: 99%
“…It is well established that the substrate plays a crucial role in determining the quality of the deposited sample. For example, depending on the crystalline quality of the AlN substrate ZnO deposited films show an epitaxial growth [19,20]. Extensive studies have been reported on ZnS nanostructures doped with different transition metal ions (such as Co, Mn, Ni, Fe) prepared by different techniques [21][22][23][24].…”
Section: Fig 1 the Cubic Unit Cell Of Zinc Blende (A) And The Hexagmentioning
confidence: 99%
“…They studied the effect on microhardness, grain size, crystallographic quality, stress and stoichiometry developed in the films. TiN thin films were synthesized on different substrates by means of vacuum arc discharge method [5]. The prepared TiN films have N/Ti ratio of around 1, with low levels of contamination elements.…”
Section: Introductionmentioning
confidence: 99%