Ion beam shadowing effect in submicrometer large-angle-tilt implanted drain (LATID) MOSFETs

Electrical characteristics of 0"/?45"/90"orientation 0.5 pm CMOSFETs with source/drain regions fabricated by three ion-implantation methods were discussed. For asymmetrical one-sided 7"-implantation method, large device orientation dependent fluctuation and asymmetry were observed in (saturation drain current ID and maximum substrate current IB of both nand p-MOSFETs/threshold voltage VT of p-MOSFETs) and (ID of n-MOSFETs/IB of both nand p-MOSIFETs), respectively. However, almost comparable data were obtained for symmetrical 0"implantation and 7"x4-implantation methods.The symmetrical 7"x4-implantation method was most preferable to obtain symmetrical electrical characteristics for use in LSIs, because of high punchthrough immunity in scaled CMOSFETs.

show abstract

Ion beam shadowing effect in submicrometer large-angle-tilt implanted drain (LATID) MOSFETs

Cited by 3 publications

References 4 publications

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods

Electrical characteristics of 0°/±45°/90°-orientation CMOSFET with source/drain fabricated by various ion-implantation methods

Contact Info

Product

Resources

About