1997
DOI: 10.1016/s0168-583x(96)00545-9
|View full text |Cite
|
Sign up to set email alerts
|

Ion beam smoothing of CVD diamond thin films by etchback method

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
5
0

Year Published

2004
2004
2023
2023

Publication Types

Select...
9

Relationship

0
9

Authors

Journals

citations
Cited by 12 publications
(5 citation statements)
references
References 5 publications
0
5
0
Order By: Relevance
“…The situation is almost inverse in case of the protrusions near the surface steps as they are situated normally on the surface. Since the etching rate of 500 eV O + /O + 2 ion beam machining is highest at the normal incidence [14], the protrusions and irregularities around the cutting edge are easily etched out due to grazing incidence sputtering at the tip. Therefore, sharpening of the cutting edge and polishing of the surface were simultaneously achieved in our proposed method.…”
Section: From 90mentioning
confidence: 99%
See 1 more Smart Citation
“…The situation is almost inverse in case of the protrusions near the surface steps as they are situated normally on the surface. Since the etching rate of 500 eV O + /O + 2 ion beam machining is highest at the normal incidence [14], the protrusions and irregularities around the cutting edge are easily etched out due to grazing incidence sputtering at the tip. Therefore, sharpening of the cutting edge and polishing of the surface were simultaneously achieved in our proposed method.…”
Section: From 90mentioning
confidence: 99%
“…Moreover, minimal irradiation damage is expected to occur in our method due to low energy reactive ion beam machining (RIBM) using oxygen. In RIBM, chemical sputtering takes a significant role and it becomes more pronounced towards lower ion energy [14]. Therefore, the physical sputtering induced damage structure on the diamond surface is simultaneously etched out by the chemical sputtering creating volatile substances like CO 2 or CO.…”
Section: From 90mentioning
confidence: 99%
“…The value of the etching rate corresponding to the effective ion incidence angle, θ e can be obtained by using the experimental data of Kiyohara et al [28], and then the average etching rate V is derived for each cycle. Figure 3 shows the plots of the average etching rate against the vertical angle ϕ for the swing angle ±30…”
Section: Simulation Of the Profile Changes Of A Conical Type Diammentioning
confidence: 99%
“…Conventionally, diamond nano-tip for AFM probes are fabricated using a combination of CVD-diamond film, standard lithography and dry etching process [9][10][11][12]. Among the dry etching processes, PE (plasma etching) [13], RIE (reactive ion etching) [14,15], IBM (ion beam machining) [16][17][18], RIBM (reactive ion beam machining) [18], IBAE (ion beam assisted etching) [19], RIBM (reactive ion beam machining) and FIB (focused ion beam) machining are being widely used [20,21] for ultra-fine machining of diamond tools. RIE, which is commonly used for surface micromachining of CVD diamond MEMS, cannot be applied for the forming and sharpening of diamond probes used in AFM because in this method the incident angle of the ions cannot be changed as required, hence it becomes difficult to control the shape of the diamond tip.…”
Section: Introductionmentioning
confidence: 99%