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A high-intensity femtosecond (fs) laser can fabricate complicated three-dimensional microstructures inside photosensitive glass with high spatial resolution. In this work, the mechanism of the photoreaction of the photosensitive glass to the infrared fs laser is investigated. We examine the photoinduced electron excitation process on the basis of the determination of the critical dose and a change of the optical-absorption spectrum after the fs laser irradiation. The photoreaction mechanism is discussed in comparison with the case of an ultraviolet nanosecond laser irradiation. Finally, the successive interband electron excitation through defect levels by multiphoton absorption is proposed.

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Electron beam (EB) lithography using polymethylmethacrylate (PMMA) and oxygen gas reactive ion etching (RIE) were used to fabricate fine patterns in a diamond mould. To prevent charge-up during EB lithography, thin conductive polymer was spin-coated over the PMMA resist, yielding dented line patterns 2 μ m wide and 270 nm deep. The diamond mould was pressed into PMMA on a silicon substrate heated to 130, 150 and 170ºC at 43.6, 65.4 and 87.2 MPa. All transferred PMMA convex line patterns were 2 μ m wide. Imprinted pattern depth increased with rising temperature and pressure. PMMA patterns on diamond were transferred by the diamond mould at 150ºC and 65.4 MPa, yielding convex line patterns 2 μ m wide and 200 nm high. Direct aluminium and copper patterns were obtained using the diamond mould at room temperature and 130.8 MPa. The diamond mould is thus useful for replicating patterns on PMMA and metals.

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