Ion beam sputter deposition of $$\hbox {SiO}_2$$ thin films using oxygen ions

Design of filament-type auxiliary ion source and study on its improvement of thin film parameters

“…When 𝐼 = 500𝑚𝐴, similarly, the refractive index increases slightly with the continuous increase of ion beam energy E; when 𝐼 = 1000𝑚𝐴, the refractive index also increases with the continuous increase of ion beam energy E, and the trend of flattening is more obvious. The change of refractive index reflects the density of the film to a certain extent [8] , and the higher the density of the film layer, the greater the corresponding refractive index [9] . It can be seen that the auxiliary ion source proposed in this paper can improve the density of the film layer to a certain extent, but because the ion source designed in this paper is a low energy ion source, its improvement in the density of the film layer is not obvious.…”

Silicon Dioxide Thin Films Deposited Using Oxide Targets: Results of Atomistic Simulation

“…Silicon dioxide is the main film-forming material with a low refractive index. SiO 2 films are produced using both metal [8][9][10] and oxide targets [11][12][13][14][15]. In the case of metal targets, individual atoms and metallic clusters pass into the gas phase from the target and are oxidized by the oxygen flow supplied to the vacuum chamber.…”