Ion beam sputtering induced nanostructuring of polycrystalline metal films

Ghose, D.

doi:10.1088/0953-8984/21/22/224001

Cited by 27 publications

(13 citation statements)

References 75 publications

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“…Formation of surface ripples at grazing angle irradiation is typically observed on these surfaces, with an orientation parallel to the ion beam (PeMR). In contrast to the amorphous materials, the formation of PaMR has been observed only in a few specific cases [17,18].…”

Section: Introductionmentioning

confidence: 95%

Ion-induced roughening and ripple formation on polycrystalline metallic films

et al. 2013

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We present a study of nanopattern formation on polycrystalline Ni surfaces upon low energy Ar ion bombardment. At low angles of ion incidence an isotropic, rough morphology develops on the surface while at grazing incidence a ripple structure parallel to the ion beam direction is formed (so-called perpendicular mode ripples). To explain this behavior we propose a model which is based on a combination of (a) surface roughening due to sputter yield variation between different crystalline grains and (b) anisotropic nonlinearity resulting from the oblique angle bombardment. By computer simulations we show that the combination of these two phenomena excellently reproduces the experimental behavior, in particular the dependence of the surface morphology on the ion incidence angle. Importantly, the formation of ripples at grazing incidence does not involve any linear instability, in strong contrast to the present model of the ripple formation process.

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Section: Introductionmentioning

confidence: 95%

Ion-induced roughening and ripple formation on polycrystalline metallic films

et al. 2013

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“…Highly ordered ripple patterns are often obtained by grazing incidence ion sputtering of metal surfaces which induces the formation of ripples oriented parallel to the incident ion beam. 7,36,37 For silicon surfaces, however, it has proven difficult to fabricate such parallel patterns. 38 In addition, the quality of the parallel patterns is generally worse than at intermediate incident angles.…”

Section: A Sibs Of Silicon Surfacesmentioning

confidence: 99%

Tuning the quality of nanoscale ripple patterns by sequential ion-beam sputtering

Keller

Facsko

2010

Phys. Rev. B

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It is demonstrated that the quality of nanoscale ripple patterns on silicon surfaces can be substantially improved by applying sequential ion-beam sputtering. A flat silicon surface is sputtered at an intermediate incident angle which leads to the spontaneous formation of a periodic ripple pattern with 25 nm periodicity oriented normal to the direction of the incident ion beam. After rotating the sample by an azimuthal angle of 90°, the surface is sputtered parallel to the ripples under grazing incidence. At the low fluences applied in this second step, no ripple pattern oriented parallel to the ion beam forms. However, due to geometrical shadowing and preferential erosion of pattern defects, grazing incidence sputtering enhances the order and regularity of the ripple pattern. The quality of the ripple pattern is assessed by evaluating its normalized density of topological defects which is determined from atomic force microscopy images. During grazing incidence ion sputtering, the normalized defect density is found to decrease exponentially with the applied ion fluence. It is shown that in this way the defect density of the initial ripple pattern can be reduced by at least 40% while keeping its periodicity approximately constant. Numerical integrations of the Kuramoto-Sivashinsky equation are in good qualitative agreement with the experimental results and suggest that the observed reduction in the density of pattern defects during sequential ion-beam sputtering is a universal effect present in a large variety of experimental systems.

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“…The occurrence of regular ripple pattern has been studied extensively for various metal surfaces [58][59][60][61][62][63][64][65][66][67][68]. For example, the evolution of the Cu(110) surface morphology during low-temperature (180 K) ion sputtering was studied as a function of the incident ion-beam angle θ by means of STM [60].…”

Section: H Gnasermentioning

confidence: 99%

Nanostructures on surfaces by ion irradiation

Gnaser

2011

Pure and Applied Chemistry

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The bombardment of the surface of a solid by energetic ions often results in pronounced surface modifications, leading to characteristic topographical features. In this report, the development of specific morphological nanostructures on surfaces under ion irradiation is discussed. The following aspects will be emphasized: (i) on an atomic scale, the generation of isolated defects such as adatoms and surface vacancies due to single-ion impacts, and their possible clustering; (ii) the transition from such individual defects toward extended morphological features on the surface and suitable scaling relations to describe them; (iii) the formation of highly periodic structures with nanoscale dimensions such as nanodots and "ripple"-like features, and the dependence of these nanostructcures on various ion-irradiation parameters and substrate materials; (iv) the theoretical concepts proposed to model the observed patterns which are thought to be related to (and caused by) the interplay between ion erosion and diffusion of adatoms (vacancies), thus inducing a surface reorganization.

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Ion beam sputtering induced nanostructuring of polycrystalline metal films

Cited by 27 publications

References 75 publications

Ion-induced roughening and ripple formation on polycrystalline metallic films

Ion-induced roughening and ripple formation on polycrystalline metallic films

Tuning the quality of nanoscale ripple patterns by sequential ion-beam sputtering

Nanostructures on surfaces by ion irradiation

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