Ion beam sputtering of germanium – Energy and angular distribution of sputtered and scattered particles

Feder, René; Bundesmann, Carsten; Neumann, H.; Rauschenbach, B.

doi:10.1016/j.nimb.2014.05.009

Cited by 27 publications

(19 citation statements)

References 25 publications

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“…Recently, we reported about the systematic investigation of the properties of secondary particles and thin films in the ion beam sputter deposition process of Si [12], Ge [13,14] and Ag [12,15,16]. Here we present, to a larger extend than in previous reports, measured energy distributions of sputtered and backscattered particles in the ion beam sputter process of Ag.…”

Section: Introductionmentioning

confidence: 82%

Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Bundesmann

Feder

Lautenschläger

et al. 2015

Contrib. Plasma Phys.

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Ion beam sputter deposition allows tailoring the properties of the film-forming, secondary particles (sputtered target particles and backscattered primary particles) and, hence, thin film properties by changing ion beam (ion energy, ion species) and geometrical parameters (ion incidence angle, polar emission angle). In particular, the energy distribution of secondary particles and their influence on the ion beam deposition process of Ag was studied in dependence on process parameters. Energy-selective mass spectrometry was used to measure the energy distribution of sputtered and backscattered ions. The energy distribution of the sputtered particles shows, in accordance with theory, a maximum at low energy and an E −2 decay for energies above the maximum. If the sum of incidence angle and polar emission angle is larger than 90• , additional contributions due to direct sputtering events occur. The energy distribution of the backscattered primary particles can show contributions by scattering at target particles and at implanted primary particles. The occurrence of these contributions depends again strongly on the scattering geometry but also on the primary ion species. The energy of directly sputtered and backscattered particles was calculated using equations based on simple two-particle-interaction whereas the energy distribution was simulated using the well-known Monte Carlo code TRIM.SP. In principal, the calculation and simulation data agree well with the experimental findings.

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Section: Introductionmentioning

confidence: 82%

Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Bundesmann

Feder

Lautenschläger

et al. 2015

Contrib. Plasma Phys.

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show abstract

“…In summary, the systematic investigations of the sputter deposition process of Ge have overall revealed smaller changes in the film properties compared to the results of the systematic investigations of the ion beam sputter deposition process of Ag [4], even though the energy and angular distributions of the backscattered and sputtered particles show considerable variation with changing process parameters [3,4,6]. This is likely related to the fact that the Ge films were found to be amorphous whereas Ag films were found to be polycrystalline.…”

Section: Resultsmentioning

confidence: 88%

“…In the experimental energy distributions in Ref. [6] it was shown that there is a considerable amount of backscattered Ar and Xe ions with energies higher than these reference energies. Two contributions could be identified, primary ions backscattered from target atoms (Ar-Ge scattering) or backscattered from implanted primary particles (Ar-Ar or Xe-Xe scattering).…”

Section: Resultsmentioning

confidence: 98%

“…[6] the energy and angular distributions of the sputtered and backscattered particles under systematic variation of ion beam and geometrical parameters were discussed in detail for sputtering Ge. Here, the properties of Ge thin films grown under the same process parameters are presented and systematic relations to the properties of the film forming particles are discussed.…”

Section: Introductionmentioning

confidence: 99%

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Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

et al. 2015

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“…Recently, we have reported about the systematic investigation of secondary particle and thin film properties of the ion beam sputter deposition process of Si [14], Ge [8,15] and Ag [9,10,14,16].…”

Section: Introductionmentioning

confidence: 99%

Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

Lautenschläger

Feder

Neumann

et al. 2016

Nuclear Instruments and Methods in Physics Research Section B:

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In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E-n , which is in principle in accordance with Thompson´s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the highenergetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to simulations done with the Monte Carlo code SDTrimSP. Both confirm in principle the experimental findings.

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Ion beam sputtering of germanium – Energy and angular distribution of sputtered and scattered particles

Cited by 27 publications

References 25 publications

Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Energy Distribution of Secondary Particles in Ion Beam Deposition Process of Ag: Experiment, Calculation and Simulation

Ion beam sputter deposition of Ge films: Influence of process parameters on film properties

Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

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