Ion beam synthesis and investigation of nanocomposite multiferroics based on barium titanate with 3d metal nanoparticles

Khalitov, N.I.; Lyadov, N. M.; Валеев, В. Ф.; Хайбуллин, Р. И.; Faĭzrakhmanov, I. A.; Dulov, E.N.; Тагиров, Л. Р.; Ibragimov, Sh. Z.; Prikhod’ko, K. E.; Roddatis, Vladimir; Maksutoğlu, M.; Kazan, S.; Mikailzade, F.

doi:10.1134/s1063783413060152

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…Indeed, preliminary results have shown that decreasing the Co dose down to 2 × 10 16 Cm –2 allows an insulating perovskite to be obtained after the same RTP, while maintaining a saturation magnetization of 0.90 μ B Co –1 . Also, electrical tuning of the ferromagnetic resonance has been reported for Co-implanted BaTiO 3 before recrystallization. , This magnetoelectric effect demonstrates the elastic coupling between the Co clusters and amorphized perovskite.…”

Section: Results and Discussionmentioning

confidence: 85%

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Thin Film Multiferroic Nanocomposites by Ion Implantation

Algueró

Ricote

Torres

et al. 2014

ACS Appl. Mater. Interfaces

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Thin film multiferroic nanocomposites might enable a range of potentially disruptive integrated magnetoelectric devices for information storage, spintronics, microwave telecommunications, and magnetic sensing. With this aim, we have investigated ion implantation of magnetic species into ferroelectric single crystal targets as a radically novel approach to prepare film nanoparticulate magnetic-metal ferroelectricoxide composites. These materials are an alternative to multiferroic oxide epitaxial columnar nanostructures that are under intensive research, but whose magnetoelectric response is far from expectations. Here, we unambiguously demonstrate the preparation of such a thin film multiferroic nanocomposite of Co and BaTiO 3 by ion implantation of a high dose of the magnetic species, followed by rapid thermal processing under tailored conditions. Results thus constitute a proof of concept for the feasibility of obtaining the materials by this alternative approach. Ion implantation is a standard technique for the microelectronic industry in combination with well-established patterning procedures.

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Section: Results and Discussionmentioning

confidence: 85%

“…Also, electrical tuning of the ferromagnetic resonance has been reported for Co-implanted BaTiO 3 before recrystallization. 26,33 This magnetoelectric effect demonstrates the elastic coupling between the Co clusters and amorphized perovskite.…”

Section: ■ Results and Discussionmentioning

confidence: 92%