Ion channeling and Raman scattering studies of the lattice disorder and residual strain in neutron irradiated GaN

Kuriyama, K.; Tokumasu, Takashi; Sano, Hiroaki; Okada, M.

doi:10.1016/j.ssc.2004.04.020

Cited by 9 publications

(5 citation statements)

References 23 publications

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“…The optical properties of as-grown and ion implanted GaN layers have been explored in a wide extent and most of the features are well understood. However, only very few reports have been published exploiting the optical and structural properties of GaN in radiation environments [5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Defect studies on fast and thermal neutron irradiated GaN

Lorenz

Marques

Franco

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Introductionmentioning

confidence: 99%

Defect studies on fast and thermal neutron irradiated GaN

Lorenz

Marques

Franco

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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“…The value is mostly the same as the sum of the threshold voltage shift caused by the single neutron and gamma-ray irradiation. When the GaN HEMT is exposed to neutron irradiation, donor traps are produced [25,26] in the p-GaN layer, which weakens the depletion effect of p-GaN on 2DEG, leading to a negative shift of the threshold voltage. For the gamma-ray irradiation, additional insulating layers and interface traps are produced in the insulating layer and the insulating layer/AlGaN interface.…”

Section: Discussionmentioning

confidence: 99%

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

et al. 2022

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This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray irradiation. The results show that when the accumulated gamma-ray doses are up to 800k rad(Si), the leakage-current degradations of the two types of GaN HEMTs with 14 MeV neutron irradiation of 1.3 × 1012 n/cm2 and 3 × 1012 n/cm2 exhibit a lower degradation than the sum of the two separated effects. However, the threshold voltage shifts of the cascode structure GaN HEMT show a higher degradation when exposed to both TID and DDD effects. Moreover, the failure mechanisms of the synergistic effect in GaN HEMT are investigated using the scanning electron microscopy technique. It is shown that for the p-GaNHEMT, the increase in channel resistance and the degradation of two-dimensional electron gas mobility caused by neutron irradiation suppresses the increase in the TID leakage current. For the cascode structure HEMT, the neutron radiation-generated defects in the oxide layer of the metal–oxide–semiconductor field-effect transistor might capture holes induced by gamma-ray irradiation, resulting in a further increase in the number of trapped charges in the oxide layer.

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“…5 and 6. It is observed that many additional impurities are produced in concentrations comparable to the historically considered Ge and C. [23][24][25][26][27] Additionally, some elemental concentrations show substantial temporal dependence on the order of days to months. This defines the timescale for future experimental study of the doping of these systems through transmutation.…”

Section: Temporal Transmuted Element Concentrationsmentioning

confidence: 99%

“…22 There have been no published theoretical or experimental investigations of the potential of transmutation doping of Ga 2 O 3 and, although there have been a few experimental investigations of the potential for the use of thermal neutron transmutation to dope GaN, no effort has conducted a complete analysis considering all impurities introduced due to the irradiation and their temporal variation. In the earliest experimental investigations in 2002 and 2004, 23,24 Ge production through (n,g) reactions with the two stable isotopes of gallium was considered in the interpretation of experimental results. Later, the (n,p) reaction of neutrons with 14-N was included in the analysis after observing that high sample resistivity (10 8 Ohms at room temperature) was maintained after 1000 1C annealing.…”

Section: Introductionmentioning

confidence: 99%