Ion-energy effects in silicon ion-beam epitaxy

Rabalais, J. W.; Al-Bayati, A.; Boyd, Kevin J.; Marton, D.; Kulik, J.; Zhang, Z.; Chu, W. K.

doi:10.1103/physrevb.53.10781

Cited by 102 publications

(40 citation statements)

References 63 publications

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“…Indeed, this layer is absent in the films produced by the LBL process where the energy of silicon ions is low (10 -30 eV) [60]. The thickness and amorphous fraction of the subsurface layer increases with ion energy [27], which is consistent with the creation of defects by ions with energies above 20 eV [61,62]. Raman intensity (a.u.…”

Section: Layer-by-layermentioning

confidence: 83%

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

Cabarrocas

2004

phys. stat. sol. (c)

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We review current models and propose new approaches for the production of silicon thin films by low temperature plasma processes. Growth models have often been borrowed from those developed for hydrogenated amorphous silicon and are based on surface diffusion of SiH 3 . However, in situ growth studies have also pointed out the fast diffusion of hydrogen and its role in the crystallization of the film through subsurface reactions. Moreover, ions and silicon nanocrystals can also play a crucial role in microcrystalline silicon deposition. We show that ion bombardment is responsible for the formation of a disorderd subsurface layer while deposition on a cooled substrate allows us to trap the silicon nanocrystals and to prevent their growth, thus leading to nanocrystalline thin films. The deposition at 200 °C on substrates with a low density of surface defects allows for the surface mobility of the nanocrystals and their agglomeration to form large grains, thus resulting in polycrystalline silicon thin films.

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Section: Layer-by-layermentioning

confidence: 83%

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

Cabarrocas

2004

phys. stat. sol. (c)

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“…From a technological viewpoint the deposition of semiconductor films with energetic atoms is of interest because it has been found that films of (001) Si can be grown epitaxially at lower temperature if energetic atoms (10 to 50 eV per atom) are utilized rather than thermal energy atoms [9,10,[48][49][50]. Recently high quality epitaxial (001) Si has been grown using mass analyzed incident beams of Si of 20 eV [48] and 15 eV [49,50].…”

Section: Molecular Dynamics Simulation Of the Energetic Deposition Ofmentioning

confidence: 99%

Molecular Dynamics Simulation of Thin Film Growth with Energetic Atoms

Gilmore

Sprague²

2002

Chemical Physics of Thin Film Deposition Processes for Micro- And Nano-Technologies

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Thin Film Deposition With Energetic AtomsHyperthermal atoms are deposited upon a substrate in thin film deposition processes. Even when the atoms in the vapor phase are not intentionally accelerated to the substrate, the vapor phase atoms are attracted to the substrate surface with a potential of a few electron volts (eV) because of the interaction between the incoming atom and the substrate. Some deposition processes such as ion beam assisted deposition(IBAD), ion beam deposition (IBD), sputter deposition(S), and plasma enhanced chemical vapor deposition (PECVD)result in ions striking the substrate with energies from 10 to over 100 eV as shown in figure 1[1].Research has demonstrated that energetic incident atoms can increase the density [2], modify the microstructure [3], chemistry [4], and stress [5] ofthin films. Several examples where energetic deposition techniques are known to affect the physical properties are in the deposition of multilayered metals and in the low temperature epitaxial growth of Si. Multilayered metals such as CrfFe and Co/Cu have a giant magnetoresistance (GMR) effect that is a result of changes in scattering of electrons from interfaces as a magnetic field is applied to the multilayer [6,7]. Fullerton and coworkers have shown that the condition and character of the interface is critical to the GMR effect [8], and that the character of the interface can be modified by utilizing energetic incident atoms. In semiconductor systems it is desired to grow epitaxial Si at low temperatures where diffusion will not significantly mix the layers of doped semiconductors, insulators or metals that have previously been created. It has been observed that if energetic Si atoms are deposited at 400°C rather than thermal energy 283 Y. Pauleau (ed.), Chemical Physics of Thin Film Deposition Processes for

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“…2) Ion-assisted MBE that incorporates low-energy (30-100 eV) ion bombardment during deposition to affect island nucleation, impurity pinning, vacancy generation and subsurface recoil implantation [3]. 3) Ultrahigh vacuum (UHV) sputtering to produce an energetic flux (10-150 eV) that leads to increased surface mobility, subsurface implantation, and penetration of hydrogenated surfaces [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

et al. 2002

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Differences in the homoepitaxy of Ge(001) are explored using a dual MBE/PLD deposition system. With identical substrate preparation, temperature calibration, background pressure and analysis, the system provides a unique comparison of the processes arising only from kinetic differences in the flux and at the surface. All films show mounded growth. At substrate temperatures below 200ºC, PLD films are smoother than MBE films, whereas they are similar at higher temperatures.

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Ion-energy effects in silicon ion-beam epitaxy

Cited by 102 publications

References 63 publications

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

New approaches for the production of nano‐, micro‐, and polycrystalline silicon thin films

Molecular Dynamics Simulation of Thin Film Growth with Energetic Atoms

Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

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