Ion Implantation and Rapid Thermal Annealing in Synergy for Shallow Junction Formation

Abstract

Ion implantation in semiconductor device fabrication followed by Rapid Thermal Annealing (RTA) is a useful and essential combination for creating shallow junctions in advanced silicon device technology. The electrical activation of the implanted impurities is an important issue for controlled shallow junction formation in the present ULSI-technology because high electrical activity is needed to assure low contact resistance. The low thermal budget processing of RTA can achieve up to the desired 100% electrical dopant activation with limited diffusion. Transient diffusion related to the type of damage cannot be excluded and has to be reduced by specially chosen implantation conditions. On the other hand, the strong sensitivity of sheet resistance as a function of annealing temperature in the partially activated range helps to optimize and to control the heating uniformity and the repeatability of the RTA equipment. Furthermore specially selected implant conditions for wafers can be used for different process monitors. This flexibility of RTA in combination with ion implantation is illustrated using several ion species and various implant conditions processed in different isochronal or isothermal annealing experiments.

Boron Ultrashallow Junction Formation in Silicon by Low‐Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

“…The recipes consist of a prolonged purge step for stabilization of the gas ambient, a prestabilization at 750ЊC, 10 s, followed by a final 10 s isochronal anneal at 1000, 1050, and 1100ЊC, respectively, with a ramp-up rate of 50 K/s and a 30 K/s ramp down. The standard process technology for shallow junction formation 23 was used only with additional gas-flow engineering for low oxygen concentration. An average postanneal uniformity (1) of less than 2% on a 200 mm wafer was found for these ultrashallow junctions.…”

Orientation symmetry breaking in self-assembled Ce1−xGdxO2−ynanowires derived from chemical solutions

“…Thus, RTA appears as very adequate tool to combine with CSD to conduct a detailed study of nucleation and coarsening phenomena. RTA has been mainly used during semiconductor processing to implant ions and make electrically active dopants with minimal diffusive motion 40 or to obtain high concentration of dopants in the channel under the gate in CMOS. 41,42 Some examples of its application for CSD-based materials are the growth of multilayered architectures to develop fully functional oxide thin-lm capacitors with good ferroelectric and fatigue properties, 43 as well as, oxide electrodes with low resistivity.…”

A TEM study on ZrO2-rich phases in the quasibinary system ZrO2-Zr3N4: Comparison between fast and slowly cooled samples

“…The fact that a nitridation of zirconia provides the formation of different crystalline oxynitride phases called γ (space group: cubic Ia3 or orthorhombic Ibca), β (R3), β' (R3), and β'' (P3) is well known [6][7][8][9][10][11]. The structures of those modifications, especially in the slowly cooled samples, as well as the mechanism of their formation have been intensively investigated and reported in our previous work [12][13][14][15][16][17].…”