Ion Implantation Defects in 4H-SiC DIMOSFET

Fontana, Enzo; Piluso, Nicolò; Russo, Alfio; Lorenti, Simona; Marcellino, Cinzia M.; Coffa, S.; Via, F. La

doi:10.4028/www.scientific.net/msf.858.418

Cited by 13 publications

(9 citation statements)

References 7 publications

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“…All luminous intensity data was one-tenth of the original data to make sure the maximum luminous intensity was lower than 100 a.u. The native peak was 3.18 eV near to the SiC bandgap energy and the defect energy level was 2.56 eV which is near to the literature value [ 18 ]. From the literature, if the maximum luminous intensity is normalized to 100 a.u.…”

Section: Resultssupporting

confidence: 77%

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Ren

et al. 2021

Materials

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This paper demonstrated the impact of process conditions on the surge current capability of 1.2 kV SiC junction barrier Schottky diode (JBS) and merged PiN Schottky diode (MPS). The influence of ohmic contact and defect density produced by implantation was studied in the simulation. The device fabricated with high temperature implantation had less defect density in the implant region compared with room temperature implantation, which contributed to higher hole injection in surge current mode and 20% surge capability improvement. In addition, with lower P+ ohmic contact resistance, the device had higher surge capability. When compared to device fabrication with a single Schottky metal layer in the device active area, adding additional P+ ohmic contact on top of the P+ regions in the device active area resulted in the pn junctions sharing a greater portion of surge current, and improved the devices’ surge capability by ~10%.

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Section: Resultssupporting

confidence: 77%

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Ren

et al. 2021

Materials

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“…These spectra show two peaks, a narrow one related to the 4H-SiC bandgap at 390 nm and another related to defects induced by ion implantation peaked at 488 nm and with a 175 nm full width half maximum (FWHM). The presence of the defect peak is associated with crystallographic damage, which introduces optically active intra-bandgap energy levels [3]. The intensity of this peak increases with increasing the temperature of the first annealing process; in particular, at 1750 °C its intensity is 7% higher than at 1650°C.…”

Section: Resultsmentioning

confidence: 99%

Thermal Annealing of High Dose P Implantation in 4H-SiC

Calabretta

Zimbone

Barbagiovanni

et al. 2019

MSF

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In this work, we have studied the crystal defectiveness and doping activation subsequent to ion implantation and post-annealing by using various techniques including photoluminescence (PL), Raman spectroscopy and transmission electron microscopy (TEM). The aim of this work was to test the effectiveness of double step annealing to reduce the density of point defects generated during the annealing of a P implanted 4H-SiC epitaxial layer. The outcome of this work evidences that neither the first 1 hour isochronal annealing at 1650 - 1700 - 1750 °C, nor the second one at 1500 °C for times between 4 hour and 14 hour were able to recover a satisfactory crystallinity of the sample and achieve dopant activations exceeding 1%.

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“…1,2) Despite these important improvements, several defects may still exist in grown films, mainly stacking faults (SF), dislocations, and pointlike defects either produced during the epitaxial growth or the implantation or etching process that may be required in device manufacturing. [3][4][5][6][7][8] The electrical behaviour of these defects impacts the overall quality of SiC devices, e.g., it has been shown that single Shockley stacking faults (SSSFs) act as recombination centers and expand during forward bias in bipolar devices, resulting in an increase in on-state resistance; 3) ð4; 4Þ SF can significantly scatter propagating electron waves, increasing both the resistance and the Schottky barrier in n-doped SiC films. 9) On the other hand, point defects, mainly Z 1=2 and EH 6=7 , induce a reduction in minority carrier lifetime and an increase in leakage current in Schottky diodes.…”

Section: Hmentioning

confidence: 99%

Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements

Privitera

Litrico

Camarda

et al. 2017

Appl. Phys. Express

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We study the correlation between crystal quality and electrical transport in 4H-SiC by micro-photoluminescence and laser-beam-induced photocurrent measurements. A focused HeCd laser at 325 nm has been employed to simultaneously measure, with a spatial resolution of a few microns, both the photoluminescence and current–voltage characteristics of 4H-SiC Schottky diodes. We found that the laser-induced photocurrent acquired along a defect can give information on its spatial distribution in depth and that the local minority carrier lifetime and generation depend on the type of stacking fault, both decreasing for defects with deeper intragap levels.

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Ion Implantation Defects in 4H-SiC DIMOSFET

Cited by 13 publications

References 7 publications

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

The Impact of Process Conditions on Surge Current Capability of 1.2 kV SiC JBS and MPS Diodes

Thermal Annealing of High Dose P Implantation in 4H-SiC

Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements

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