Thermal Annealing of High Dose P Implantation in 4H-SiC

Calabretta, Cristiano; Zimbone, Massimo; Barbagiovanni, Eric G.; Boninelli, Simona; Piluso, Nicolò; Severino, Andrea; Stefano, Maria Ausilia Di; Lorenti, Simona; Calcagno, L.; Via, F. La

doi:10.4028/www.scientific.net/msf.963.399

Cited by 5 publications

(5 citation statements)

References 7 publications

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“…In fact, by entering the nominal 3C-SiC TO and LO vibrational frequency, namely ωT and ωL, in the dielectric function expression ε(ω)=ε∞{1+false[ωL2−ωT2/false(ωT2−ω2−iωΓfalse)false]}−false[ωp2/ω(ω+iγ)false], where ε∞ is the infinite dielectric constant, Γ and γ are the phonon and electron damping factor, respectively, it is possible to extract the electron carrier density from the expression of plasma frequency ωp=4πne2/ε∞m, where m is the electron effective mass. This technique provides a non-destructive immediate way for electrical sample characterization [19].…”

Section: Resultsmentioning

confidence: 99%

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

et al. 2019

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In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was obtained by an innovative technique based on silicon melting: after the first step of the hetero-epitaxial growth process of 3C-SiC on a Si substrate, Si melts, and the remaining freestanding SiC layer was used as a seed layer for the homo-epitaxial growth. Different morphological analyses indicate that the growth temperature and the growth rate play a fundamental role in the stacking faults density. In details, X-ray diffraction and micro-Raman analysis show the strict relationship between growth temperature, crystal quality, and doping incorporation in the homo-epitaxial chemical vapor deposition CVD growth process of a 3C-SiC wafer. Furthermore, photoluminescence spectra show a considerable reduction of point defects during homo-epitaxy at high temperatures.

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Section: Resultsmentioning

confidence: 99%

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

et al. 2019

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“…Moreover (Fig. 4b) furnace-treated samples show a large spectral defect related emission region [11,12] peaked at 490 nm and with 175 nm full width half maximum (FWHM) which corresponds to wide defectiveness area within the implant region. Out-of-equilibrium annealing regimes, on the other hand, restore a spectrum with lower intra-bandgap peak by a factor of 8-9, as well as shifted to 550 nm emission wavelength similar to those of epitaxial layer.…”

Section: Resultsmentioning

confidence: 97%

“…The cross section confirms the data acquired from previous analyses. In fact, typical 4H-SiC diffraction pattern from implanted region is evident under [11][12][13][14][15][16][17][18][19][20] zone axis, as can be seen from the inset in Fig. 5a.…”

Section: Resultsmentioning

confidence: 99%

4H-SiC MOSFET Source and Body Laser Annealing Process

Calabretta

Agati

Zimbone

et al. 2020

MSF

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This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime. Characterization was carried out through micro-Raman spectroscopy, Photoluminescence (PL), Transmission Electron Microscopy (TEM) and outcomes were than compared with 1h thermally annealed at 1650-1770-1750 °C P implanted samples (source implant) and P and Al implanted samples for 30 minutes at 1650 °C (source and body implants). Experimental results demonstrate that laser annealing enables crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Unlike the results obtained with thermal annealing where stress up to 172 Mpa and high carbon vacancies (Vc) concentration is recorded, laser annealing provides almost stress free samples and much less defective crystal avoiding intra-bandgap carrier recombination. Implant was almost preserved except for step-bouncing and surface oxidation phenomena leading to surface roughening. However, the results of this work gives way to laser annealing process practicability for lattice damage recovery and dopant activation.

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“…The intensity value of the band–band peak is equal to that of the sample subjected to annealing for 1 h at 1650 °C (see Figure 3b). Thermally annealed samples exhibit a large peak centred at 490 nm with 175 nm full width at half maximum (FWHM), which can be related to the generation of a high defectiveness concentration and in particular to Vc generated in the implanted region and in the epitaxial layers [11,12]. In addition, interstitial aggregates present within the implanted layers provide an emission contribution to wavelengths corresponding to intra-band-gap emission signal.…”

Section: Resultsmentioning

confidence: 99%

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

et al. 2019

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This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 1 h as well as P and Al implanted samples annealed at 1650 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.

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Thermal Annealing of High Dose P Implantation in 4H-SiC

Cited by 5 publications

References 7 publications

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

Temperature Investigation on 3C-SiC Homo-Epitaxy on Four-Inch Wafers

4H-SiC MOSFET Source and Body Laser Annealing Process

Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

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