1993
DOI: 10.1016/0168-583x(93)95005-p
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Ion implantation in future MOS technology

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Cited by 5 publications
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“…Lower energy ions, a few tens of keV, are typically used in fundamental studies involving in situ irradiation of thin foils (~100 nm thick) in a transmission electron microscope [2]. Ions in this lower energy range are also used in the solid state processing practices of the electronics industry [3] and for the purpose of surface modification [4].In these latter cases the and the corresponding damage layer is a few tens of nanometers thick. The number of vacancies and interstitials produced per cascade, the fraction of them in clusters and the degree of surface modification vary with incident atom/ion energy and mass, the temperature, and the material itself.…”
Section: Introductionmentioning
confidence: 99%
“…Lower energy ions, a few tens of keV, are typically used in fundamental studies involving in situ irradiation of thin foils (~100 nm thick) in a transmission electron microscope [2]. Ions in this lower energy range are also used in the solid state processing practices of the electronics industry [3] and for the purpose of surface modification [4].In these latter cases the and the corresponding damage layer is a few tens of nanometers thick. The number of vacancies and interstitials produced per cascade, the fraction of them in clusters and the degree of surface modification vary with incident atom/ion energy and mass, the temperature, and the material itself.…”
Section: Introductionmentioning
confidence: 99%