Ion-implanted complementary IMPATT diodes for D-band

Lee, D.H.; Ying, R.S.

doi:10.1109/proc.1974.9620

Cited by 10 publications

(4 citation statements)

References 4 publications

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“…2;5 A primary optically pumped cesium beamfrequency standard, NIST-7, is already in use. 6 Its accuracy 5 10 ;15 is in the same order of reported accuracy as the cesium fountain frequency standard. Several new primary optically pumped cesium beam frequency standards are in development.…”

mentioning

confidence: 66%

A New Pumping-Probing Scheme for the Optically Pumped Cesium Beam Frequency Standard

Chen

Cheng-Jin

Wang

et al. 2000

Chinese Phys. Lett.

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mentioning

confidence: 66%

A New Pumping-Probing Scheme for the Optically Pumped Cesium Beam Frequency Standard

Chen

Cheng-Jin

Wang

et al. 2000

Chinese Phys. Lett.

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“…An additional requirement for practical CIT reactor applications is long-pulse, high-duty-factor, neutral beam operation. Present 40-keV injectors operate with 0.3-s pulses and duty factors of 15% [ 22] . It appears that steady-state operation should be feasible with large-area beams and cryogenic pumping, and a 50-keV, 50-A, 2-s source is presently under development [22].…”

Section: Choice Of Injection Energymentioning

confidence: 99%

Reactor aspects of counterstreaming-ion tokamak plasmas

Jassby

1976

Nucl. Fusion

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Toroidal DT plasmas in which the D and T ions make up two distinct, quasi-thermal velocity distributions, oppositely displaced in velocity along the magnetic axis, can be set up by introducing all ions by tangential injection of neutral beams, and by removing ions from the plasma shortly after they have decelerated to an energy <̃2Te by Coulomb drag on the plasma electrons. A simple physical model for this counterstreaming-ion operation allows one to deduce the ion velocity distributions and required energy and particle confinement times that are in good agreement with the results of previous Fokker-Planck calculations. These distributions are used to calculate fusion reactivities, from which the variation of fusion power gain and power density with injection energy and Te are determined. The practical problems of implementing counterstreaming operation in a tokamak include charge-exchange losses, impurities, and the need to minimize plasma re-cycling.Several properties of the counterstreaming system that make it advantageous for near-term reactor applications are (1) optimal performance at relatively low injection energy (40–60 keV), because of head-on nuclear collisions, (2) small electron energy confinement time for Q ∼ 1 (e. g. neτE ≈ 2 × 1012 cm−3·s at Te ≈ 3.5 keV), (3) fuelling solely by the injected beams, and (4) possible maintenance of the plasma current by the beams. For realistic tokamak parameters, neutron wall loading is limited to 0.5 MW/m2 or less. Plasma parameters appropriate to radiation test reactors and fusion-fission hybrid reactors are discussed.

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“…A highly energetic beam of the desired ion is made to strike and penetrate into the target (silicon) wafer to cast a welldefined p-n junction, having an appropriate doping profile. Many experimental reports are available on the fabrication of ion-implanted silicon p-n junction [1][2][3] as well as MOS devices. Despite the rapid advancement of p-n junction (mainly IMPATT -IMPact Avalanche Transit Time devices) modeling in the recent years, some fundamental problems, viz., profile studies are not adequately undertaken, though they appear important in fabrication of semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

“…Thus, the objective of this report is to generate and optimize ion-implanted double drift p-n junction profiles to realize optimum RF power and efficiency at high frequency for use in VLSI Circuits. It is also well known that diodes with ion implantation profiles generate more noise [3]. In addition impact ionization itself is the main source of noise in IMPATT diodes [10].…”

Section: Introductionmentioning

confidence: 99%

Optimized Ion Implantation Profiles for the p-n Junction Using Forth Moment Approach for Application in High Frequency VLSI Circuits

Agrawal¹,

Parida²,

Dash³

et al. 2008

ECTI-EEC

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The ion implantation based impurity doping profile across a p-n junction can be represented accurately using Pearson's fourth moment approach. The high-frequency characteristics of the reverse biased p-n junction (IMPATT diodes) are computed using different ion implantation profiles. It has been observed that the microwave properties of IMPATT diodes are very sensitive to the change in doping profiles. The optimized ion implantation profiles are suggested for different frequency bands to fabricate the reverse biased p-n junction for application in high-frequency circuits.

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Ion-implanted complementary IMPATT diodes for D-band

Cited by 10 publications

References 4 publications

A New Pumping-Probing Scheme for the Optically Pumped Cesium Beam Frequency Standard

A New Pumping-Probing Scheme for the Optically Pumped Cesium Beam Frequency Standard

Reactor aspects of counterstreaming-ion tokamak plasmas

Optimized Ion Implantation Profiles for the p-n Junction Using Forth Moment Approach for Application in High Frequency VLSI Circuits

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