Ion-implanted Ge:B far-infrared blocked-impurity-band detectors

Beeman, J. W.; Goyal, Supriya; Reichertz, L. A.; Häller, E. E.

doi:10.1016/j.infrared.2006.12.001

Cited by 49 publications

(18 citation statements)

References 19 publications

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“…It dangles the possibility of finally extending the BIB concept to other material systems as well as a technologically simpler means of fabricating Si-based BIBs. 7 However, the device presented in Ref. 7 is a planar one, holding intrinsic disadvantages concerning array fabrication and exhibiting noncompetitive performance.…”

mentioning

confidence: 99%

Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods

Rauter

Fromherz

Winnerl

et al. 2008

Applied Physics Letters

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The molecular beam epitaxial (MBE) fabrication of blocked-impurity-band detectors (BIB) has been a technologically complex and delicate matter ever since its demonstration in silicon, and has not been adapted for other material systems offering detection onsets at lower terahertz frequencies. We report the fabrication and characterization of a vertical Si:B BIB, circumventing the intrinsically troublesome MBE growth of an ultrapure blocking layer by employing ion implantation. We present a thorough characterization of our device, which exhibits highly competitive figures of merits. Our results not only increase the accessibility of BIB fabrication tools for ultrasensitive terahertz detection but also open a road to other material systems.

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mentioning

confidence: 99%

Terahertz Si:B blocked-impurity-band detectors defined by nonepitaxial methods

Rauter

Fromherz

Winnerl

et al. 2008

Applied Physics Letters

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“…Currently, compared to the development of Si-based BIB devices, Ge-based and GaAs-based BIB devices are lagging. For Ge-based BIB devices, a small-scale array has been fabricated [90], but there is still a lot of space for development. The research on GaAs is even more behind, thus, the relative reports are very few [91].…”

Section: Blocked-impurity-band Fir Photodetectormentioning

confidence: 99%

Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Chen

Wang

et al. 2022

Sensors

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Benefiting from the inherent capacity for detecting longer wavelengths inaccessible to human eyes, infrared photodetectors have found numerous applications in both military and daily life, such as individual combat weapons, automatic driving sensors and night-vision devices. However, the imperfect material growth and incomplete device manufacturing impose an inevitable restriction on the further improvement of infrared photodetectors. The advent of artificial microstructures, especially metasurfaces, featuring with strong light field enhancement and multifunctional properties in manipulating the light–matter interactions on subwavelength scale, have promised great potential in overcoming the bottlenecks faced by conventional infrared detectors. Additionally, metasurfaces exhibit versatile and flexible integration with existing detection semiconductors. In this paper, we start with a review of conventionally bulky and recently emerging two-dimensional material-based infrared photodetectors, i.e., InGaAs, HgCdTe, graphene, transition metal dichalcogenides and black phosphorus devices. As to the challenges the detectors are facing, we further discuss the recent progress on the metasurfaces integrated on the photodetectors and demonstrate their role in improving device performance. All information provided in this paper aims to open a new way to boost high-performance infrared photodetectors.

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“…如图所示, 器件的阻挡层越厚, 得到的暗电流越低. 温度越低, 阻挡层对暗电流的抑制作用越明显, 暗电流曲线的正反偏不对称性越明显 [52] . 当器件所加偏压高于击穿电压时, 由电极注入的电流将占据主导位置, 导致暗电流急剧上升 [53] .…”

Section: 平面结构Si基bib探测器的光电特性unclassified