Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

Carmody, C.; Tan, Hark Hoe; Jagadish, Chennupati; Gaarder, A.; Marcinkevičius, Saulius

doi:10.1063/1.1579565

Cited by 57 publications

(47 citation statements)

References 19 publications

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“…Defect-engineering, on the other hand, can provide a means to decrease this value if desired. 41 Spatially resolved, near-field imaging of propagating surface plasmon polaritons in graphene 9,10 has revealed high confinement factors as defined as the ratio of the free-space wavelength to the plasmon wavelength λ p . However, in our experiment the plasmon dispersion is flat, i.e., ω(q) ≈ const., in the probed momentum range on the right side of the light line (Figure 1c).…”

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confidence: 99%

Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy

et al. 2014

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ABSTRACT:We report on time-resolved mid-infrared (mid-IR) nearfield spectroscopy of the narrow bandgap semiconductor InAs. The dominant effect we observed pertains to the dynamics of photoexcited carriers and associated surface plasmons. A novel combination of pump− probe techniques and near-field nanospectroscopy accesses high momentum plasmons and demonstrates efficient, subpicosecond photomodulation of the surface plasmon dispersion with subsequent tens of picoseconds decay under ambient conditions. The photoinduced change of the probe intensity due to plasmons in InAs is found to exceed that of other mid-IR or near-IR media by 1−2 orders of magnitude. Remarkably, the required control pulse fluence is as low as 60 μJ/cm 2 , much smaller than fluences of ∼1−10 mJ/cm 2 previously utilized in ultrafast control of near-IR plasmonics. These low excitation densities are easily attained with a standard 1.56 μm fiber laser. Thus, InAsa common semiconductor with favorable plasmonic properties such as a low effective masshas the potential to become an important building block of optically controlled plasmonic devices operating at infrared frequencies.

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confidence: 99%

Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy

et al. 2014

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“…In the case of the Fe:InGaAsP emitters, the signal amplitude was found to be highest for the 4.0×10 16 cm -3 doping concentration, although this level was similar to that obtained for the lowest doping sample (1.0×10 16 cm -3 ). Similarly, for Fe:InGaAs, the THz amplitude was greatest for the lowest doped wafer, (0.5×10 16 cm -3 ), in the doping range studied here.…”

Section: Introductionmentioning

confidence: 82%

“…In summary, a range of Fe-doped InGaAs and InGaAsP wafers, grown by MOCVD with doping levels in the range 0.5×10 16 The results presented here demonstrate that high-performance systems based on CW THz generation and detection in photomixers can be accomplished using reproducible MOCVD grown material, commercial DBR lasers in the telecommunications 'C-band', simple fabrication techniques and simple driving electronics. …”

Section: Introductionmentioning

confidence: 98%

Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

Mohandas

Freeman

Rosamond

et al. 2016

Journal of Applied Physics

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Abstract-We demonstrate the generation of continuous wave terahertz (THz) frequency radiation from photomixers fabricated on both Fe-doped InGaAs and Fe-doped InGaAsP, grown by metal-organic chemical vapor deposition. The photomixers were excited using a pair of distributed Bragg reflector (DBR) lasers with emission around 1550 nm, and THz radiation was emitted over a bandwidth of greater than 2.4 THz. Two InGaAs and four InGaAsP wafers with different Fe doping concentrations were investigated, with the InGaAs material found to outperform the InGaAsP in terms of emitted THz power. The dependencies of the emitted power on the photomixer applied bias, incident laser power, and material doping level, were also studied.

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“…Slightly better results (the lifetime of~0.5 ps and the resistivity of 1.9 Ω·cm) were obtained later by the same group after implanting InGaAs with very high energy (11 MeV) Br + ions [103]; this material was used to fabricate a continuous-wave THz emitter generating at frequencies up to 0.8 THz by mixing the radiation from two laser diodes with the wavelengths around 1.55 µm. Combination of short carrier trapping times and large resistivities appropriate for ultrafast optoelectronic applications was so far achieved in [104] by implanting In 0.53 Ga 0. 47 As with Fe + ions over a certain range of the implantation doses.…”

Section: Ingaasmentioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

112

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Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

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Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications

Cited by 57 publications

References 19 publications

Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy

Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy

Generation of continuous wave terahertz frequency radiation from metal-organic chemical vapour deposition grown Fe-doped InGaAs and InGaAsP

Semiconductors for terahertz photonics applications

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