Undoped In0.53Ga0.47As epilayers were implanted with 2-MeV Fe+ ions at doses of 1×1015 and 1×1016 cm−2 at room temperature and annealed at temperatures between 500 and 800 °C. Hall-effect measurements show that after annealing, layers with resistivities on the order of 105 Ω/square can be achieved. Carrier lifetimes as short as 300 fs are observed for samples annealed at 500 and 600 °C. For higher annealing temperatures, characteristic times of the optical response are on the order of a few picoseconds.

Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP ∕ InGaAs ∕ InP J. Appl. Phys. 98, 054904 (2005); 10.1063/1.2033143Photoluminescence in delta-doped InGaAs/GaAs single quantum wells A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells Appl.We have compared the time integrated photoluminescence ͑PL͒ and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are significantly longer in samples intermixed by the impurity-free methods, while the carrier collection efficiency of the quantum wells is more efficient in samples intermixed by ion implantation.

A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells Appl. Phys. Lett. 72, 1599 (1998); 10.1063/1.121185Lateral selectivity of ion-induced quantum well intermixing

Asϩ and P ϩ implantation was performed on semi-insulating ͑SI͒ and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1ϫ10 16 cm Ϫ2 and p-type InP was implanted with doses between 1 ϫ10 12 and 1ϫ10 16 cm Ϫ2 . Subsequently, rapid thermal annealing at temperatures between 400 and 700°C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond differential reflectivity showed that, for the highest-annealing temperatures, the implanted SI InP samples exhibited high mobility, low resistivity, short response times, and minimal structural damage. Similar measurements on implanted p-type InP showed that the fast response time, high mobility, and good structural recovery could be retained while increasing the resistivity.

A study of the evolution of sheet resistance of p-and n-type In 0.53 Ga 0.47 As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs as compared to p-InGaAs and was greater for samples with a higher initial free carrier concentration. Implantation with H ϩ yielded isolation behavior that was different from that for implantation with the three medium-mass ions. The thermal stability of defects induced by implantation was also investigated by cumulative annealing, and was found to be slightly higher in n-InGaAs as compared to p-InGaAs. Shallow donor production in the InGaAs epilayer during implantation played a crucial role in determining the electrical characteristics of the samples.