A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells

Abstract

Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP ∕ InGaAs ∕ InP J. Appl. Phys. 98, 054904 (2005); 10.1063/1.2033143Photoluminescence in delta-doped InGaAs/GaAs single quantum wells A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells Appl.We have compared the time integrated photoluminescence ͑PL͒ and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are significantly longer in samples intermixed by the impurity-free methods, while the carrier collection efficiency of the quantum wells is more efficient in samples intermixed by ion implantation.

InP-based photonic circuits: Comparison of monolithic integration techniques

“…All these techniques differ in quality of the intermixed material, which will depend on the presence of defects after treatment [31], in spatial resolution and in the resulting device performances. What they have in common is that they use the compositional gradient in the MQW as the driving force for diffusion, activated by some mechanism.…”

Improving crystal quality of InGaAs∕GaAs quantum dots by inductively coupled Ar plasma

“…11 To verify that the grown-in defect density is reduced by the plasma exposure, the TRPL of a 3-min-exposed sample without annealing was measured and compared with that of an as-grown one ͑Fig. 4͒.…”

Photoreflectance investigations of quantum well intermixing processes in compressively strained InGaAsP∕InGaAsP quantum well laser structures emitting at 1.55μm

“…26 Thus, in order to describe the QW states properly and to include the tunneling effects, the time-dependent Schrödinger equation ͑TDSE͒ needs to be used. The range of the disordering process is characterized by the interdiffusion length L d 2 = t a D͑T a ͒, where t a is the annealing time.…”