Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

Carmody, C.; Tan, Hark Hoe; Jagadish, Chennupati

doi:10.1063/1.1555273

Cited by 15 publications

(10 citation statements)

References 11 publications

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“…The PL spectra of the H-implanted InP-capped samples annealed at 800 C for 30 s are shown in Figure 21 (Barik et al, 2006b). It has been reported that dynamic annealing in InGaAs is significant even at room temperature and is stronger than in InP (Carmody et al, 2003). This property has also been observed in other lowdose implanted samples annealed at temperatures in the entire temperature range used in this study.…”

Section: Inas/inp Qdssupporting

confidence: 75%

Disordering of Quantum Structures for Optoelectronic Device Integration

Mokkapati

Barik³

et al. 2011

Comprehensive Semiconductor Science and Technology

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Section: Inas/inp Qdssupporting

confidence: 75%

Disordering of Quantum Structures for Optoelectronic Device Integration

Mokkapati

Barik³

et al. 2011

Comprehensive Semiconductor Science and Technology

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“…Note that the density and diffusion range of these defects depend on the ridge geometry; both quantities are increased for narrow and high ridges. Phosphorus has a large self-diffusion coefficient, 13 which makes phosphorus interstitials optimal candidates to be dominant defects inside the ridge. The source of these interstitials is not well understood at present, since they have to be generated at the InP-dielectric capping layer interface; one could tentatively argue that the excess phosphorus accumulated at the surface 18 could constitute the source of in-diffusing P.…”

Section: Stress Modelmentioning

confidence: 99%

“…On the other hand, one has to consider the nature of the mask, as the use of SiO x or SiN x has been demonstrated to impact on the intermixing phenomena, because of the difference between the defect types generated. 13 Samples etched using different mask dimensions and with different etching times, resulting in ridge waveguides of different dimensions (width and height), were studied. Top-view CL images of different waveguides are shown in Fig.…”

Section: Intensity Distributionmentioning

confidence: 99%

Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching

Chanson

Martin²,

Avella³

et al. 2010

Journal of Elec Materi

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International audienceRidge waveguides fabricated by inductively coupled plasma (ICP) etching using chlorine-based gases were studied by spectrum image cathodoluminescence (CL). Structures with different dimensions (height and width) were studied, evidencing the generation of defects during ICP processing. Using the CL spectrum images, the distribution of the stresses induced by the defects was mapped. The residual stresses depend on the dimensions of the waveguides. Using finite-element analysis the strain distribution was reproduced. The initial strain conditions provided a picture of the distribution of the defects generated by the etching process, showing differences between the etched floor, the side-walls of the waveguides, and the unetched top surface. The possible mechanisms for defect formation, as well as the possible identity of the defects, are discussed

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“…Implantations were performed at 7°off the ͑001͒ direction to minimize channeling effects. The substrate temperature was maintained at 200°C to prevent surface amorphization 6 and the implantation fluence ⌽ ranged from 5 ϫ 10 11 to 10 14 cm −2 . Based on SRIM 2000 simulations, 24 the energy of P ions was set to 30 keV to confine implantation damage to the first 120 nm below the top surface ͓see Fig.…”

Section: Methodsmentioning

confidence: 99%

Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Dion

Desjardins

Schiettekatte

et al. 2008

Journal of Applied Physics

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation Dion, C.; Desjardins, P.; Schiettekatte, F.; Chicoine, M.; Robertson, M. D.; Shtinkov, N.; Poole, P. J.; Wu, X.; Raymond, S.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.Vacancy-mediated intermixing in InAs/InP"001… quantum dots subjected to ion implantation We have investigated the influence of defects emanating from phosphorus implantation damage in the InP capping layer on postgrowth thermally induced intermixing in self-assembled InAs/InP͑001͒ quantum dots ͑QDs͒. Photoluminescence ͑PL͒ spectra from as-grown samples could be described as the superposition of separate PL peaks where each peak corresponded to emission from an ensemble of QDs with a particular height ranging from 4 to 13 ML. Blueshift of up to 270 meV and significant bandwidth broadening were observed in the PL spectra after ion implantation with a fluence of 5 ϫ 10 11 −10 14 cm −2 and subsequent annealing at temperatures ranging from 450 to 600°C. From the analysis of the evolution of the QD peaks upon intermixing, which revealed the coexistence of intact QD PL and a broad PL feature related to heavily intermixed QDs, it was suggested that the bandwidth broadening resulted from spatial inhomogeneity in the compositional intermixing. In order to better understand the mechanism responsible for the ion-implantation-induced intermix...

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Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

Abstract: A comparison of spectroscopic and microscopic observations of ion-induced intermixing in InGaAs/InP quantum wells Appl. Phys. Lett. 72, 1599 (1998); 10.1063/1.121185Lateral selectivity of ion-induced quantum well intermixing

Cited by 15 publications

References 11 publications

Disordering of Quantum Structures for Optoelectronic Device Integration

Disordering of Quantum Structures for Optoelectronic Device Integration

Cathodoluminescence Study of InP Photonic Structures Fabricated by Dry Etching

Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

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