2008
DOI: 10.1063/1.2970093
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Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation

Abstract: Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Vacancy-mediated intermixing in InAs/InP(001) quantum dots subjected to ion implantation Dion, C.; Desjardins, P.; Schiettekatte, F.; Chicoine, M.; Robertson, M. D.; Shtinkov, N.; Poole, P. J.; Wu, X.; Raymond, S.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDIT… Show more

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Cited by 3 publications
(4 citation statements)
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“…This behavior is typical of the intermixing process in InAsP/InP quantum dots with large numbers of grownin P anti-site defects [20][21][22] . Upon annealing, P anti-site defects dissociate to form P interstitials and In vacancies.…”
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confidence: 80%
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“…This behavior is typical of the intermixing process in InAsP/InP quantum dots with large numbers of grownin P anti-site defects [20][21][22] . Upon annealing, P anti-site defects dissociate to form P interstitials and In vacancies.…”
mentioning
confidence: 80%
“…Apart from selecting two quantum dots that happen to have the same emission energy, attempts have been made to dynamically tune two dots into resonance using controls such as applied strain 14 or electric-field 15 . An alternative to dynamic tuning is quantum dot intermixing which has been shown to be an effective method to tune emission energies over a wide spectral range [16][17][18][19][20][21][22] . Intermixing is typically performed ex-situ by rapid thermal annealing 19 but can also be done in-situ using a focused laser 18 .…”
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confidence: 99%
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“…The long self-diffusion in the InAs crystal is suggested to be mediated by the In vacancies generated as a consequence of the In extraction caused by the Bi substitution [31]. That is, while the In diffusion in a perfect InAs crystal is believed to be negligible, the diffusion barrier is significantly lowered in the defective InAs crystal as In atoms can travel rapidly along the In vacancy sites [32]. We note that practically no Bi was detected by EDX in the porous substrate shown in figure 2(h), ruling out the diffusion of Bi into the InAs substrate.…”
Section: Discussionmentioning
confidence: 99%