Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

Nasr, Olfa; Alouane, Mohamed Helmi Hadj; Ilahi, Bouraoui; Salem, B.; Sfaxi, L.; Maâref, H.

doi:10.1016/j.jallcom.2014.07.030

Cited by 6 publications

(6 citation statements)

References 31 publications

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“…L. Seravalli et al have investigated the effect of relaxed InGaAs layer instead of the InGaAs SBL on tuning of PL emission energy of InAs QDs [ 15 , 16 ]. The studies of Jin Soo Kim et al and O. Nasi et al have involved the entire InGaAs matrix including the SRL and SBL experimentally; nevertheless, just a few discrete data were analyzed [ 17 , 18 ] for the SBL. Specific detailed research on emission energy tuning effect of InGaAs matrix, especially the InGaAs SBL, still need to be carried out.…”

Section: Introductionmentioning

confidence: 99%

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Wang

Chen

et al. 2016

Nanoscale Res Lett

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InAs/InGaAs dot-in-well (DWELL) structures have been investigated with the systematically varied InGaAs thickness. Both the strained buffer layer (SBL) below the dot layer and the strain-reducing layer (SRL) above the dot layer were found to be responsible for the redshift in photoluminescence (PL) emission of the InAs/InGaAs DWELL structure. A linear followed by a saturation behavior of the emission redshift was observed as a function of the SBL and SRL thickness, respectively. The PL intensity is greatly enhanced by applying both of the SRL and SBL. Finite element analysis simulation and transmission electron microscopy (TEM) measurement were carried out to analyze the strain distribution in the InAs QD and the InGaAs SBL. The results clearly indicate the strain reduction in the QD induced by the SBL, which are likely the main cause for the emission redshift.

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Section: Introductionmentioning

confidence: 99%

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Wang

Chen

et al. 2016

Nanoscale Res Lett

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“…Meanwhile, the PL FWHM decreases first in the low temperature range and then increases again (V-shaped variation). This atypical variation has not been observed, neither for reference InAs QDs in GaAs matrix nor for QDs with strain reducing capping layer grown in the same conditions and showing narrower size distribution and lower surface density [24]. This makes the observed phenomena likely to originate from the large dots size dispersion.…”

Section: Pl As a Function Of Temperaturementioning

confidence: 79%

“…Indeed, the atomic intermixing alters the QDs composition resulting in a change of the carriers' confinement potential, emission energy and size dispersion [24e26]. It's worth noting that the increase of the intermixing induced a decrease of the PL integrated intensity testifying also an enhancement of the nonradiative defects density [24].…”

Section: Pl Properties At 11kmentioning

confidence: 99%

Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

Ilahi

Nasr

Paquette³

et al. 2016

Journal of Alloys and Compounds

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a b s t r a c tThis paper reports on experimental and theoretical investigation of atyical temperature-dependent photoluminescence properties of InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The impact of a post-growth intermixing process on these properties has been studied. For the as-grown sample, the maximum of the emission band follows a sigmoidal function while the photoluminescence linewidth mimics a V-shape function as the temperature increases, from 11 to 300 K. These behaviors are attributed to thermally activated carrier transfer mechanisms within the inhomogenious distribution of quantum dots. These atypical behaviors are found to disappear progressively with the degree of intermixing and consequent narrowing of the dot size dispersion. The experimental results have been interpreted in the frame of the localized states ensemble model revealing that the large dots size distribution is the main origin of the observed anomalies. Furthermore, the calculations show that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers.

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“…As we can see from spectral results discussed above, the intermixing effect is significant in determining the emission behaviors of the self-assembled InAs/GaAs QD system. Actually, it has been found that well-controlled QD intermixing allows tuning of their emission wavelength, making it an attractive tool for the manufacturing of multiple-section photonic integrated circuits. ,, However, a desirable large blue-shift of the emission wavelength is always accompanied by a dramatic decrease of PL intensity during the intermixing process. ,,− , In addition, the high-quality AlGaAs cladding layer usually is grown at much higher temperatures compared with that for the growth of the QD active medium, which can be equivalent to a relatively strong RTA treatment for the QD active region. Moreover, RTA can also be utilized to get rid of the point defects that are produced during the epitaxy growth.…”

Section: Resultsmentioning

confidence: 99%

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

Wang

Zhang

et al. 2017

ACS Photonics

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Multiple-layer InAs/GaAs quantum dot (QD) laser structures were etched to remove the p-side AlGaAs cladding layers to investigate the temperature-dependent photoluminescence (PL) characteristics. Four QD samples, including undoped as grown QDs, p-doped as grown QDs, undoped annealed QDs, and p-doped annealed QDs, were prepared by molecular beam epitaxy (MBE) and a postgrowth annealing process for comparison. Among them, modulation p-doped QD samples exhibit much less temperaturedependent characteristics of PL spectra and notable insensitivity to intermixing compared to undoped ones. This is attributed to the effects of modulation p-doping, which can inhibit holes' thermal broadening in their closely spaced energy levels and significantly suppress In/Ga interdiffusion between QDs and their surrounding matrix. These results provide greater freedom in the choice of MBE growth for high-quality active regions and claddings of QD laser diodes. The superior features of the modulation p-doped QD materials have been transferred naturally to the laser devices. The continuous-wave ground-state (GS) lasing has been realized in both p-doped QD Fabry−Perot (F−P) and laterally coupled distributed-feedback (LC-DFB) narrow ridge lasers with very short cavity length without facet coatings, in which a 1315 nm GS lasing has been found in a F−P laser with a 400 μm cavity length, while single longitudinal mode lasing with a very large tunable range of 140 nm and side mode suppression ratio of 51 dB is achieved in an LC-DFB laser. This work demonstrates great development potential of InAs/GaAs QD lasers for applications in high-speed fiber-optic communication.

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Postgrowth intermixing of strain engineered InAs/GaAs quantum dots

Cited by 6 publications

References 31 publications

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure

Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing

Development of Modulation p-Doped 1310 nm InAs/GaAs Quantum Dot Laser Materials and Ultrashort Cavity Fabry–Perot and Distributed-Feedback Laser Diodes

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