MTT-S International Microwave Symposium Digest
DOI: 10.1109/mwsym.1981.1129815
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Ion-Implanted K-Band GaAs Power FET

G. Taylor1,
S.G. Liu2,
D. Bechtle3

Abstract: the performance up to 26 GHz from a GSAS power FET produced by ion implantation. At of 250 mW at 3 dB gain with 27.4% power-added efficiency was obtained. At 26 GHz,

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