Ion-Implanted Laser-Annealed p<sup>+</sup> and n<sup>+</sup> Regions: A Potential Solution for Industrially Feasible High-Efficiency N-Type Interdigitated Back-Contact Solar Cells

Yang, Xinbo; Müller, Ralph; Xu, Lujia; Bi, Qunyu; Weber, Klaus; Franklin, Evan; Benick, Jan

doi:10.1109/jphotov.2014.2361211

Cited by 7 publications

(6 citation statements)

References 20 publications

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“…Therefore, in the interest of environmentfriendliness as well as inexpensive manufacturing, use of phosphoric acid (H 3 PO 4 ) as the dopant source represents an almost perfect alternative. Several approaches of phosphorus diffusion have been reported including spin-on (Ahmad et al 2017;Balaji et al 2015;Moon et al 2009), ion implantation (Lee et al 2013;Yang et al 2015), and spray-on phosphoric acid (Basu et al 2016). In most of the reported work, use of commercially-manufactured dopants increases costs and places constraints on its shelf-life.…”

Section: Methodsmentioning

confidence: 99%

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Ahir¹,

Sepeai²,

Zaidi³

2018

JKUKM

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Crystalline silicon (c-Si) wafer-based solar cells have been dominating the current photovoltaic industries. However, prevalent manufacturing practices are based on environmentally-harmful chemicals and expensive methodologies. This paper reports on the development of inexpensive, environmentally-benign phosphoric acid-based emitter formation methods as an alternative to conventional highly toxic and poisonous POCl 3 gas source-based chemistry. Two emitter formation approaches at temperatures in 850-925 o C range have been investigated. The first approach is referred to as the doctor blade (DB) technique, where the flat Si wafer surface is uniformly coated by phosphoric acid (H 3 PO 4 ) via a moving blade. A small gap between the blade and wafer is maintained in order to form a thin uniform film on the wafer. The second method is referred to as the extension of the blade method (EDB), where an un-doped wafer is placed proximately to the deposited H 3 PO 4 wafer. During the high temperature drive-in process, phosphorous emitter was formed on the un-doped wafer surface through evaporation and deposition of phosphorus atoms from H 3 PO 4 coated wafer. All diffusion processes were carried out on 180 µm thick, planar boron-doped Si wafers in a conventional quartz tube furnace. The variation of sheet resistances over a broad range from ~20-180 Ω/sq were consistent with temperature dependence. Highest diffusion uniformity was observed for 10% H 3 PO 4 solution. Diffusion process simulations based on DifCad software were in good agreement with experimental data. The work reported here illustrates that an environmentally-benign approach in emitter formation based on H 3 PO 4 is feasible for manufacturing solar cells. ABSTRAKSel suria berasaskan wafer silikon hablur (c-Si) telah mendominasi industri fotovoltan masa kini. Walau bagaimanapun, amalan pengilangan lazim adalah berdasarkan penggunaan bahan kimia yang berbahaya dan kaedah yang mahal. Kertas kajian ini melaporkan tentang pembangunan kaedah pembentukan pemancar yang murah, mesra alam sekitar berasaskan asid fosforik sebagai alternatif kepada bahan bertoksik dan sumber gas kimia beracun konvensional berasaskan POCl 3 . Dua pendekatan pembentukan pemancar pada julat suhu o C dikaji. Pendekatan pertama merujuk kepada teknik bilah doktor (DB), di mana permukaan rata wafer Si disalut secara seragam oleh asid fosforik (H 3 PO 4 ) melalui bilah bergerak. Jurang kecil diantara bilah dan wafer dikekalkan bagi membentuk satu filem nipis seragam di atas wafer. Kaedah kedua merujuk kepada teknik bilah doktor lanjutan (EDB) dimana wafer tidak terdop diletakkan berhampiran dengan wafer yang telah dimendapkan dengan filem H 3 PO 4 . Semasa proses pandu masuk bersuhu tinggi, pemancar fosforus terbentuk di atas permukaan wafer tidak terdop melalui penyejatan dan pemendapan atom fosforus dari wafer bersalut H 3 PO 4 . Semua proses peresapan dijalankan ke atas wafer silikon terdop boron berstruktur satah dengan ketebalan 180 µm di dalam relau tiub kuarza konvensional. Variasi rintan...

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Section: Methodsmentioning

confidence: 99%

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Ahir¹,

Sepeai²,

Zaidi³

2018

JKUKM

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“…The conventional IBC solar cell, despite its high efficiency, also has electrical shading loss; therefore, the back surface field (BSF) width is generally controlled at about a quarter of the width of the emitter to prevent a large number of carrier recombination over BSF . The inconsistency of BSF and emitter widths results not only in strict patterning tolerances for processing but also has implications for the metallization.…”

Section: Introductionmentioning

confidence: 99%

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

Ding

Lin

Liu

et al. 2019

Physica Status Solidi (a)

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Silicon interdigitated back contact (IBC) solar cells with front floating emitter (FFE‐IBC) put forward a new carrier transport concept of “pumping effect” for minority carriers compared with traditional IBC solar cells with front surface field (FSF‐IBC). Herein, high‐performance FFE‐IBC solar cells are achieved theoretically combining superior crystalline silicon quality, front surface passivation, and shallow groove structure using 2D device model. The improvement of minority carrier transport capacity is realized in the conductive FFE layer through optimizing the doping concentration and junction depth. It is shown that the shallow groove on the rear side of FFE‐IBC solar cells can effectively enhance the carrier collection ability by means of minimizing the negative impact of undiffused gap or surface p–n junction. The high efficiency exceeding 25% can be realized on silicon FFE‐IBC solar cells with the novel cell structure and optimized cell parameters, where the back surface field and emitter region width can be made for the same with only a slight sacrifice of photocurrent density and conversion efficiency. It is demonstrated theoretically that the realization of high‐efficiency and low‐cost silicon IBC solar cells is feasible due to the increase of the module fabrication tolerance.

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“…Yang et al . put forward a new method consisting of patterned boron (B)/phosphorus (P) ion implantation, laser annealing and a subsequent low‐temperature oxidation, and obtained a potential efficiency higher than 23% according to simulations with the experimental parameters. Hendrichs et al .…”

Section: Introductionmentioning

confidence: 99%

Development of back-junction back-contact silicon solar cells based on industrial processes

Wang

Qian

et al. 2017

Prog. Photovolt: Res. Appl.

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We have presented simplified industrial processes to fabricate high performance back-junction back-contact (BJBC) silicon solar cells. Good optical surface structures (solar averaged reflectance 2.5%) and high implied open-circuit voltage (0.695 V) have been realized in the BJBC cell precursors through wet chemical processing, co-diffusion, P ion implantation and annealing oxidation, as well as laser patterning and plasma enhanced chemical vapour deposition passivation processes. We have achieved a certified high efficiency of close to 22% on BJBC silicon solar cells with the size of 4.04 cm 2 by using screen printing and co-firing technologies. The manufacturing process flow further successfully yields efficiency of around 21% BJBC silicon solar cells with enlarged sizes of 6 × 6 cm 2 . The present work has demonstrated that the commercialization of low-cost and high-efficiency BJBC solar cells is possible because we have used processes compatible with existing production lines.

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Ion-Implanted Laser-Annealed p⁺ and n⁺ Regions: A Potential Solution for Industrially Feasible High-Efficiency N-Type Interdigitated Back-Contact Solar Cells

Cited by 7 publications

References 20 publications

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

Development of back-junction back-contact silicon solar cells based on industrial processes

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Ion-Implanted Laser-Annealed p+ and n+ Regions: A Potential Solution for Industrially Feasible High-Efficiency N-Type Interdigitated Back-Contact Solar Cells

Cited by 7 publications

References 20 publications

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

Optimization of Phosphoric Acid-Based Emitter Formation on Silicon Wafer

High‐Efficiency Interdigitated Back Contact Silicon Solar Cells with Front Floating Emitter

Development of back-junction back-contact silicon solar cells based on industrial processes

Contact Info

Product

Resources

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Ion-Implanted Laser-Annealed p⁺ and n⁺ Regions: A Potential Solution for Industrially Feasible High-Efficiency N-Type Interdigitated Back-Contact Solar Cells